公开(公告)号：US20100136767A1

公开(公告)日：2010-06-03

申请号：US12531436

申请日：2008-08-19

申请人： Nong Moon Hwang ,  Yung Bin Chung ,  Dong Kwon Lee

发明人： Nong Moon Hwang ,  Yung Bin Chung ,  Dong Kwon Lee

IPC分类号： H01L21/326 ,  B05B5/00

CPC分类号： H01L21/0262 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601

摘要： A method for manufacturing a thin film is provided. A substrate is loaded into a chamber. A first reaction gas and a second reaction gas are supplied into the chamber. The first reaction gas is dissociated to form crystalline nanoparticles. An amorphous material is inhibited from being formed on the substrate using the second reaction gas. Thereafter, a crystalline thin film is formed from the crystalline nanoparticles provided on the substrate.

摘要翻译： 提供一种制造薄膜的方法。 将基板装载到室中。 将第一反应气体和第二反应气体供应到室中。 解离第一反应气体以形成结晶纳米颗粒。 使用第二反应气体抑制在基板上形成无定形材料。 此后，由设置在基板上的结晶纳米粒子形成结晶薄膜。

公开(公告)号：US20090078989A1

公开(公告)日：2009-03-26

申请号：US12213329

申请日：2008-06-18

申请人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

发明人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L29/792

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3185 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L29/792

摘要： Provided are a method of forming silicon nitride at a low temperature, a charge trap memory device including crystalline nano dots formed by using the same, and a method of manufacturing the charge trap memory device. The method of forming silicon nitride includes loading a substrate into a chamber of a silicon nitride deposition device comprising a filament; increasing a temperature of the filament to a temperature whereby a reactant gas to be injected into the chamber may be dissociated; and injecting the reactant gas into the chamber so as to form a crystalline silicon nitride film or crystalline silicon nitride nano dots on the substrate. In the method, the temperature of the filament may be maintained at 1,400° C.˜2,000° C., and a pressure in the chamber may be maintained at several to several ten torr when the reactant gas in injected into the chamber.

摘要翻译： 提供了一种在低温下形成氮化硅的方法，包括通过使用它们形成的结晶纳米点的电荷陷阱存储器件，以及制造电荷陷阱存储器件的方法。 形成氮化硅的方法包括将衬底装载到包括灯丝的氮化硅沉积装置的室中; 将长丝的温度升高到可以解离待注入室内的反应气体的温度; 并将反应气体注入到室中，以在衬底上形成结晶氮化硅膜或结晶氮化硅纳米点。 在该方法中，灯丝的温度可以保持在1400℃〜2000℃，并且当注入到室中的反应气体时，室中的压力可以保持在几至几十托。

公开(公告)号：US06482259B1

公开(公告)日：2002-11-19

申请号：US09646610

申请日：2001-02-20

申请人： Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Hong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

发明人： Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Hong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

IPC分类号： C30B110

CPC分类号： C30B11/00 ,  C30B29/32

摘要： The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.

摘要翻译： 本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。 本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤 在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。 根据本发明的用于生长钛酸钡或钛酸钡固溶体单晶的方法具有通过使用通常的热处理工艺而无需特殊设备来提供单晶制造工艺中有效的低成本的优点。 根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也可以应用于显示异常晶粒生长行为的其它材料体系。

公开(公告)号：US20100183818A1

公开(公告)日：2010-07-22

申请号：US12440304

申请日：2007-09-06

申请人： Nong-Moon Hwang ,  Chan-Soo Kim ,  Jae-Ik Lee ,  Yung-Bin Chung ,  Woong-Kyu Youn

发明人： Nong-Moon Hwang ,  Chan-Soo Kim ,  Jae-Ik Lee ,  Yung-Bin Chung ,  Woong-Kyu Youn

IPC分类号： C23C4/10

CPC分类号： C23C16/4401 ,  C23C16/44 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0259 ,  H01L21/0262

摘要： Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.

摘要翻译： 提供了一种使用在气相中形成的纳米颗粒的充电行为来沉积能够控制沉积速率和膜性质的膜的装置和方法。 该装置包括：其中装载有基板的腔室，构造成将反应气体引入腔室中的气体供给系统，被配置为发射热量以解散引入的反应气体的细丝;配置为施加恒定交流电流的电源; 以及偏置电源单元，其被配置为使用从电源施加的电压向衬底的顶部，侧面和底部中的至少一个施加偏压，同时膜从解离反应沉积在衬底上 气体，偏压供应单元与基板分离。

公开(公告)号：US06758898B2

公开(公告)日：2004-07-06

申请号：US10163526

申请日：2002-06-07

申请人： Ho-Yong Lee ,  Jao-Suk Kim ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

发明人： Ho-Yong Lee ,  Jao-Suk Kim ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

IPC分类号： C30B102

CPC分类号： C30B11/00 ,  C30B29/32

摘要： The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention is also applicable to other material systems showing abnormal grain growth behavior.

摘要翻译： 本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。 本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤 在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。 根据本发明的用于生长钛酸钡或钛酸钡固溶体的单晶的方法具有通过使用常规热处理工艺而不需要特殊设备来提供单晶制造工艺的有效低成本的优点。 根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也适用于显示异常晶粒生长行为的其它材料体系。