Method for depositing copper or a copper alloy
    1.
    发明授权
    Method for depositing copper or a copper alloy 有权
    铜或铜合金的沉积方法

    公开(公告)号:US06398855B1

    公开(公告)日:2002-06-04

    申请号:US09459449

    申请日:1999-12-13

    Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

    Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这种含Cu图案和/或层通过将所述衬底浸入无电镀铜溶液中而形成在衬底的活化表面上。 这种溶液通常包括:铜Cu(II)离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物,所述化合物具有化学结构为COOR1-COHR2的至少一部分,R1为与羧酸酯基团(COO)共价结合的第一有机基团,R 2为氢或第二有机基团 。 还公开了一种在活化表面上,特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

    Method for preparing an electroplating bath and related copper plating process
    3.
    发明授权
    Method for preparing an electroplating bath and related copper plating process 有权
    电镀槽制备方法及相关镀铜工艺

    公开(公告)号:US06872295B2

    公开(公告)日:2005-03-29

    申请号:US10017453

    申请日:2001-12-12

    CPC classification number: C25D3/38

    Abstract: The present invention is related to a method for the preparation of a composition for electroplating a copper-containing layer on a substrate. This method makes use of an aqueous solution that has at least: a source of copper Cu(II) ions, an additive to adjust the pH to a predetermined value, and a complexing agent for complexing Cu(II) ions. The complexing agent has the chemical formula: COOR1—COHR2R3 in which R1 is an organic group covalently bound to the carboxylate group (COO), R2 is either hydrogen or an organic group, and R3 is either hydrogen or an organic group. The solution has no reducing agent. The method involves providing electrons from a source not in direct contact with the solution, through transport means that provides the contact between said source and said solution. The present invention is also related to a process for forming a copper-containing layer on a substrate in an electroplating bath prepared according to the foregoing method.

    Abstract translation: 本发明涉及一种制备用于在基底上电镀含铜层的组合物的方法。 该方法使用至少具有铜Cu(II)离子源,将pH调节至预定值的添加剂的水溶液和用于络合Cu(II)离子的络合剂。 络合剂具有以下化学式:其中R1是与羧酸酯基团(COO)共价结合的有机基团,R 2是氢或有机基团,R 3是氢或有机基团。 该溶液没有还原剂。 该方法包括从不与溶液直接接触的源提供电子,通过提供所述源和所述溶液之间的接触的输送装置。 本发明还涉及根据上述方法制备的电镀浴中在基材上形成含铜层的方法。

    Method for depositing copper or a copper alloy
    4.
    发明授权
    Method for depositing copper or a copper alloy 有权
    铜或铜合金的沉积方法

    公开(公告)号:US06585811B2

    公开(公告)日:2003-07-01

    申请号:US10083690

    申请日:2002-02-25

    Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electro less Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1—COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

    Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这样的含Cu图案和/或层通过将所述衬底浸入电镀Cu电镀溶液中而形成在衬底的活化表面上。 这种溶液通常包括:铜Cu(II)离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物,所述化合物具有化学结构为COOR1-COHR2的至少一部分,R1为与羧酸酯基团(COO)共价结合的第一有机基团,R 2为氢或第二有机基团 。 还公开了一种在活化表面上,特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

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