Method for depositing copper or a copper alloy
    1.
    发明授权
    Method for depositing copper or a copper alloy 有权
    铜或铜合金的沉积方法

    公开(公告)号:US06398855B1

    公开(公告)日:2002-06-04

    申请号:US09459449

    申请日:1999-12-13

    Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

    Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这种含Cu图案和/或层通过将所述衬底浸入无电镀铜溶液中而形成在衬底的活化表面上。 这种溶液通常包括:铜Cu(II)离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物,所述化合物具有化学结构为COOR1-COHR2的至少一部分,R1为与羧酸酯基团(COO)共价结合的第一有机基团,R 2为氢或第二有机基团 。 还公开了一种在活化表面上,特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

    Method for depositing copper or a copper alloy
    3.
    发明授权
    Method for depositing copper or a copper alloy 有权
    铜或铜合金的沉积方法

    公开(公告)号:US06585811B2

    公开(公告)日:2003-07-01

    申请号:US10083690

    申请日:2002-02-25

    Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electro less Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1—COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

    Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这样的含Cu图案和/或层通过将所述衬底浸入电镀Cu电镀溶液中而形成在衬底的活化表面上。 这种溶液通常包括:铜Cu(II)离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物,所述化合物具有化学结构为COOR1-COHR2的至少一部分,R1为与羧酸酯基团(COO)共价结合的第一有机基团,R 2为氢或第二有机基团 。 还公开了一种在活化表面上,特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

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