公开(公告)号：US06663915B2

公开(公告)日：2003-12-16

申请号：US10012686

申请日：2001-11-13

Applicant: Roger Palmans ,  Yuri Lantasov

Inventor： Roger Palmans ,  Yuri Lantasov

IPC: B05D118

CPC classification number: H01L21/288 ,  C23C18/54 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K3/24 ,  H01L2924/00

Abstract: The present invention describes a method for copper deposition on a substrate having a barrier layer wherein a substrate (2) and an activator (1) are immersed in a copper plating bath in order to contact each other for a predetermined period.

公开(公告)号：US06398855B1

公开(公告)日：2002-06-04

申请号：US09459449

申请日：1999-12-13

Applicant: Roger Palmans ,  Yuri Lantasov

Inventor： Roger Palmans ,  Yuri Lantasov

IPC: C23C1840

CPC classification number: H01L21/76873 ,  C23C18/405 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76874

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这种含Cu图案和/或层通过将所述衬底浸入无电镀铜溶液中而形成在衬底的活化表面上。 这种溶液通常包括：铜Cu（II）离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物，所述化合物具有化学结构为COOR1-COHR2的至少一部分，R1为与羧酸酯基团（COO）共价结合的第一有机基团，R 2为氢或第二有机基团 。 还公开了一种在活化表面上，特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

公开(公告)号：US06872295B2

公开(公告)日：2005-03-29

申请号：US10017453

申请日：2001-12-12

Applicant: Roger Palmans ,  Yuri Lantasov

Inventor： Roger Palmans ,  Yuri Lantasov

IPC: C25D3/38 ,  C25D5/10

CPC classification number: C25D3/38

Abstract: The present invention is related to a method for the preparation of a composition for electroplating a copper-containing layer on a substrate. This method makes use of an aqueous solution that has at least: a source of copper Cu(II) ions, an additive to adjust the pH to a predetermined value, and a complexing agent for complexing Cu(II) ions. The complexing agent has the chemical formula: COOR1—COHR2R3 in which R1 is an organic group covalently bound to the carboxylate group (COO), R2 is either hydrogen or an organic group, and R3 is either hydrogen or an organic group. The solution has no reducing agent. The method involves providing electrons from a source not in direct contact with the solution, through transport means that provides the contact between said source and said solution. The present invention is also related to a process for forming a copper-containing layer on a substrate in an electroplating bath prepared according to the foregoing method.

Abstract translation: 本发明涉及一种制备用于在基底上电镀含铜层的组合物的方法。 该方法使用至少具有铜Cu（II）离子源，将pH调节至预定值的添加剂的水溶液和用于络合Cu（II）离子的络合剂。 络合剂具有以下化学式：其中R1是与羧酸酯基团（COO）共价结合的有机基团，R 2是氢或有机基团，R 3是氢或有机基团。 该溶液没有还原剂。 该方法包括从不与溶液直接接触的源提供电子，通过提供所述源和所述溶液之间的接触的输送装置。 本发明还涉及根据上述方法制备的电镀浴中在基材上形成含铜层的方法。

公开(公告)号：US06585811B2

公开(公告)日：2003-07-01

申请号：US10083690

申请日：2002-02-25

Applicant: Roger Palmans ,  Yuri Lantasov

Inventor： Roger Palmans ,  Yuri Lantasov

IPC: C23C1840

CPC classification number: H01L21/76873 ,  C23C18/405 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76874

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electro less Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1—COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

Abstract translation: 本发明涉及用于有源或无源器件的电连接以及集成电路的至少一部分含Cu层或含Cu图案的制造。 这样的含Cu图案和/或层通过将所述衬底浸入电镀Cu电镀溶液中而形成在衬底的活化表面上。 这种溶液通常包括：铜Cu（II）离子源; 还原剂; 调节所述水溶液的pH至预定值的添加剂; 和用于络合所述Cu离子的化合物，所述化合物具有化学结构为COOR1-COHR2的至少一部分，R1为与羧酸酯基团（COO）共价结合的第一有机基团，R 2为氢或第二有机基团 。 还公开了一种在活化表面上，特别是在Cu扩散阻挡层的活化表面上沉积Cu的方法。

公开(公告)号：US20100207177A1

公开(公告)日：2010-08-19

申请号：US12641945

申请日：2009-12-18

Applicant: Chung-Shi Liu ,  Gerald Beyer ,  Steven Demuynck ,  Zsolt Tokei ,  Roger Palmans ,  Chao Zhao ,  Chen-Hua Yu

Inventor： Chung-Shi Liu ,  Gerald Beyer ,  Steven Demuynck ,  Zsolt Tokei ,  Roger Palmans ,  Chao Zhao ,  Chen-Hua Yu

IPC: H01L23/532 ,  H01L21/768 ,  H01L29/78 ,  H01L23/522

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process.

Abstract translation: 公开了一种通过集成电路的前金属电介质（PMD）层之间的线的前端和后端之间产生接触的方法以及由此制造的器件。 PMD层包括氧气。 一方面，该方法包括在PMD中产生孔，在孔的底部沉积导电阻挡层，在孔的底部和侧壁上沉积CuMn合金，用Cu填充孔的剩余部分。 所述方法还包括进行退火处理以在所述孔的侧壁上形成阻挡层，其中所述势垒具有包括Mn的氧化物。 该方法还包括执行CMP处理。

公开(公告)号：US06271135B1

公开(公告)日：2001-08-07

申请号：US09348553

申请日：1999-07-07

Applicant: Roger Palmans ,  Joost Waeterloos ,  Gibert Declerck

Inventor： Roger Palmans ,  Joost Waeterloos ,  Gibert Declerck

IPC: H01L2144

CPC classification number: H01L23/5226 ,  H01L21/76877 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method of the present invention is related to the fabrication of a copper-based multilevel interconnect structure. This copper-based multilevel interconnect structure is based on the formation of vertical metal connections through copper-containing metal stud growth on an underlying horizontal metal pattern, followed by a stud encapsulation step against copper diffusion into the surrounding dielectric, i.e. the insulating layers. This method is of particular interest when the insulating layers used to obtain this interconnect structure are polymer layers with a low dielectric constant and preferably with a high degree of planarization.

Abstract translation: 本发明的方法涉及铜基多层互连结构的制造。 这种基于铜的多层互连结构基于通过在下面的水平金属图案上的含铜金属螺柱生长形成垂直金属连接，随后是针对铜扩散到周围电介质即绝缘层中的螺柱封装步骤。 当用于获得这种互连结构的绝缘层是具有低介电常数且优选具有高度平坦化度的聚合物层时，该方法是特别有意义的。