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公开(公告)号：US10119190B2
公开(公告)日：2018-11-06
申请号：US15354086
申请日：2016-11-17
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Moses M. David , Ta-Hua Yu , Daniel S. Bates , Jayshree Seth , Michael S. Berger , Carsten Franke , Sebastian F. Zehentmaier
Abstract: A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.
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公开(公告)号：US20170067150A1
公开(公告)日：2017-03-09
申请号：US15354086
申请日：2016-11-17
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Moses M. David , Ta-Hua Yu , Daniel S. Bates , Jayshree Seth , Michael S. Berger , Carsten Franke , Sebastian F. Zehentmaier
CPC classification number: C23C16/0245 , B81C1/00031 , B81C2201/0132 , C09J7/22 , C09J2201/606 , C23C16/50 , H01J37/32082 , H01J37/32541 , H01J2237/3321 , H01J2237/3341
Abstract: A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.
Abstract translation: 一种通过从气体混合物的等离子体化学气相沉积而将基底沉积到基底的主表面上而形成纳米结构和纳米结构化制品的方法，同时基本上同时用反应性物质蚀刻该表面。 该方法包括提供基板; 当形成等离子体时，能够将能够沉积到衬底上的第一气态物质混合，当形成等离子体时，能够蚀刻衬底的第二气态物质，从而形成气态混合物; 将气态混合物形成等离子体; 以及将所述衬底的表面暴露于所述等离子体，其中所述表面被蚀刻并且基本上同时地在所述蚀刻表面的至少一部分上沉积层，从而形成所述纳米结构。 基底可以是（共）聚合物材料，无机材料，合金，固溶体或其组合。 沉积层可以包括使用包含选自有机硅化合物，金属烷基化合物，金属异丙醇化合物，金属乙酰丙酮化合物，金属卤化物化合物及其组合的化合物的反应气体的等离子体化学气相沉积的反应产物。 可以制备高纵横比的纳米结构，并且任选地在至少一个维度，优选三个正交尺寸的随机尺寸。
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公开(公告)号：US20160141149A1
公开(公告)日：2016-05-19
申请号：US14895693
申请日：2014-07-23
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Moses M. David , Ta-Hua Yu , Daniel S. Bates , Jayshree Seth , Michael S. Berger , Carsten Franke , Sebastian F. Zehentmaier
IPC: H01J37/32
CPC classification number: H01J37/32009 , G09B19/00 , H01J2237/332 , H01J2237/334
Abstract: A method and apparatus for enhancing a cognitive ability of a user may comprise: conducting, via a user interface display of a user computing device, a training session which may comprise: presenting a transportation routing network having a source of travelers and a respective unique destination for each traveler and a path from the source to the respective unique destination, each path comprising at least one direction modification element operable by the user to correctly direct the traveler from the source to the respective unique destination; displaying to the user a traveler moving along a path from the source to the at least one direction modification element; allowing the user to control the position of the at least one direction modification element so as to direct the traveler from the source to the respective unique destination.
Abstract translation: 用于增强用户的认知能力的方法和装置可以包括：经由用户计算设备的用户界面显示进行训练会话，该训练会话可以包括：呈现具有旅行者来源的运输路由网络和相应的唯一目的地 对于每个旅行者以及从源到相应的唯一目的地的路径，每个路径包括至少一个方向修改单元，其可由用户操作以将旅行者从源正确地引导到相应的唯一目的地; 向用户显示沿着从源到至少一个方向修改元件的路径移动的旅行者; 允许用户控制至少一个方向修改元件的位置，以便将旅行者从源引导到相应的唯一目的地。
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公开(公告)号：US10134566B2
公开(公告)日：2018-11-20
申请号：US14895693
申请日：2014-07-23
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Moses M. David , Ta-Hua Yu , Daniel S. Bates , Jayshree Seth , Michael S. Berger , Carsten Franke , Sebastian F. Zehentmaier
Abstract: A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, meal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.
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