公开(公告)号：US20150351241A1

公开(公告)日：2015-12-03

申请号：US14759618

申请日：2013-12-17

Applicant: A.L.M.T. CORP.

Inventor： Yoshiyuki Hirose ,  Sachie Sugitani ,  Norihito Goma ,  Gouhei Toyoshima ,  Noboru Uenishi

IPC: H05K1/11 ,  H05K1/18

CPC classification number: H05K1/115 ,  B22F2998/10 ,  B23K35/0233 ,  B23K35/262 ,  B32B15/00 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C14/00 ,  C22C27/04 ,  H01L23/15 ,  H01L23/3677 ,  H01L2924/0002 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/092 ,  H05K1/18 ,  H05K3/4061 ,  Y10T29/49126 ,  H01L2924/00 ,  B22F7/004 ,  B22F3/26

Abstract: A ceramic wiring substrate and method for manufacturing the same, the substrate having an up-and-down conduction body which is made by forming a porous structure body from a high melting point metal and then infiltrating a low-resistance metal in an up-and-down conduction hole subsequently formed in a substrate made in a plate shape through sintering a ceramic precursor, the conduction body having a normal composite structure without an abnormally grown particle, a void, a crack and the like and not having a problem of falling off from the substrate, as well as provided a semiconductor device using this substrate. An intermediate layer formed of at least one selected from a group of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru and Hf is formed on an inner surface of the up-and-down conduction hole of the substrate before being provided with the conduction body having the composite structure.

Abstract translation: 一种陶瓷布线基板及其制造方法，所述基板具有上下导体，其通过从高熔点金属形成多孔结构体，然后在上下方向上渗入低电阻金属而制成 随后在通过烧结陶瓷前体而制成板状的基板中形成的导通体，导电体具有正常的复合结构，而没有异常生长的颗粒，空隙，裂纹等，并且不具有脱落的问题 并且提供使用该衬底的半导体器件。 在上下传导的内表面上形成由选自Mo，W，Co，Fe，Zr，Re，Os，Ta，Nb，Ir，Ru和Hf中的至少一种形成的中间层 在提供具有复合结构的导体之前，衬底的孔。

公开(公告)号：US12252766B2

公开(公告)日：2025-03-18

申请号：US17917006

申请日：2021-03-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  A.L.M.T. Corp.

Inventor： Masatoshi Majima ,  Gouhei Toyoshima ,  Kouichi Takashima

IPC: C22C26/00 ,  C25D3/12 ,  C25D7/00 ,  H01L23/373

Abstract: A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum tungsten and aluminum, wherein the content rate of the first element based on the total mass of the copper and the first element is 50 ppm or higher and 2,000 ppm or lower.

公开(公告)号：US20140308536A1

公开(公告)日：2014-10-16

申请号：US14363401

申请日：2012-11-27

Applicant: A.L.M.T. CORP.

Inventor： Gouhei Toyoshima ,  Noboru Uenishi ,  Norihito Goma ,  Satoshi Umemoto ,  Takanori Kadokura ,  Tomohiro Takida ,  Kazunaga Sakakibara

IPC: C22C27/04

CPC classification number: C22C27/04 ,  B22F3/24 ,  B22F5/006 ,  C22C1/045 ,  C22F1/02 ,  C22F1/18 ,  Y10T428/12014

Abstract: There is provided a flat plate-like sintered tungsten alloy that can be molded into a complex shape by press working or forge processing. The flat plate-like sintered tungsten alloy contains 85% by mass or more and 98% by mass or less of W, 1.4% by mass or more and 11% by mass or less of Ni, and 0.6% by mass or more and 6% by mass or less of at least one substance selected from the group consisting of Fe, Cu and Co, wherein an elongation percentage of the flat plate-like sintered tungsten alloy in a planar direction is 20% or more.

Abstract translation: 提供一种平板状烧结钨合金，其可以通过冲压加工或锻造加工成型成复杂形状。 平板状烧结钨合金含有85质量％以上且98质量％以下的W，1.4质量％以上且11质量％以下的Ni，0.6质量％以上且6以下 从Fe，Cu，Co组成的组中选出的至少一种物质的质量％以下，其中平板状烧结钨合金在平面方向的伸长率为20％以上。