公开(公告)号：US12262175B2

公开(公告)日：2025-03-25

申请号：US18110845

申请日：2023-02-16

Applicant: AAC Technologies Pte. Ltd.

Inventor： KianHeng Goh ,  Chungmin Li ,  Qiang Dan ,  Kahkeen Lai

IPC: H04R25/00 ,  H04R17/00 ,  H04R31/00

Abstract: An acoustic transducer includes: substrate including first silicon layer, first oxide layer and second silicon layer, back chamber is formed therethrough; second oxide layer on the substrate; piezoelectric unit on the second oxide layer and including first electrode layer, piezoelectric layer and second electrode layer; slit and opening formed in the second electrode layer; metal pad stacked on the first electrode layer at the opening; and additional film layer including first and second parts, the first part is lay on the second electrode layer and covers the slit, and the second part is lay on the metal pad, through slot is formed penetrating the second part to expose the metal pad. Compared with the related art, additional film layer is formed by vapor deposition, and the piezoelectric unit can vibrate with maximum displacement and lowest restriction, thereby effectively improving SPL and structural reliability, which is suitable for larger acoustic transducers.

公开(公告)号：US20240418510A1

公开(公告)日：2024-12-19

申请号：US18335991

申请日：2023-06-15

Applicant: AAC Technologies Pte. Ltd.

Inventor： Houming Chong ,  Veronica Tan ,  ZaiXiang Pua ,  Kahkeen Lai ,  Zhan Zhan

IPC: G01C21/16 ,  B81B3/00 ,  B81C1/00

Abstract: An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.

公开(公告)号：US20240336474A1

公开(公告)日：2024-10-10

申请号：US18298311

申请日：2023-04-10

Applicant: AAC Technologies Pte. Ltd.

Inventor： Houming Chong ,  Veronica Tan ,  Zaixiang Pua ,  Kahkeen Lai ,  Zhan Zhan

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5733 ,  G01C19/5769

CPC classification number: B81B3/0037 ,  B81C1/00166 ,  G01C19/5733 ,  G01C19/5769 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2203/0109

Abstract: A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.

公开(公告)号：US10947110B2

公开(公告)日：2021-03-16

申请号：US16362836

申请日：2019-03-25

Applicant: AAC Technologies Pte. Ltd.

Inventor： Lieng Loo ,  Shaoquan Wang ,  Xiaohui Zhong ,  Kahkeen Lai

IPC: B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R19/04

Abstract: The present invention provides a manufacturing method for MEMS structure. The method includes steps of: S1: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer; S2: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and S3: carrying out an over-etching process for deepening the cavity hole and control an included angle α between a side wall of the cavity hole and the structural layer to be larger than 10° but smaller than 90°. The invention also provides a MEMS structural and a MEMS microphone manufactured by the method.

公开(公告)号：US20200048080A1

公开(公告)日：2020-02-13

申请号：US16362836

申请日：2019-03-25

Applicant: AAC Technologies Pte. Ltd.

Inventor： Lieng Loo ,  Shaoquan Wang ,  Xiaohui Zhong ,  Kahkeen Lai

IPC: B81C1/00 ,  B81B3/00 ,  H04R19/04 ,  H04R19/00

Abstract: The present invention provides a manufacturing method for MEMS structure. The method includes steps of: S1: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer; S2: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and S3: carrying out an over-etching process for deepening the cavity hole and control an included angle α between a side wall of the cavity hole and the structural layer to be larger than 10° but smaller than 90°. The invention also provides a MEMS structural and a MEMS microphone manufactured by the method.

公开(公告)号：US20240372528A1

公开(公告)日：2024-11-07

申请号：US18313351

申请日：2023-05-07

Applicant: AAC Technologies Pte. Ltd.

Inventor： DongLiang Pang ,  LiEng Loo ,  Kahkeen Lai ,  Ke Wu ,  ShirNee Yap

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator and a manufacture method thereof. The acoustic resonator includes: a substrate having cavities; piezoelectric units one by one corresponding to the cavities, the piezoelectric units cover the cavities, and each piezoelectric unit includes a first electrode layer, a piezoelectric layer and a second electrode layer sequentially stacked from bottom to top; a protective layer stacked on the piezoelectric unit; a series unit having one end electrically connected to the first electrode layer of one of the piezoelectric units, and the other end electrically connected to the second electrode layer of another one of the piezoelectric units, so as to connect the two piezoelectric units in series. Compared with the 10 related art, the piezoelectric unit is protected from further risk of damages in subsequent manufacturing processes by providing a protective layer on the piezoelectric unit, so that the acoustic resonator has better Q value and coupling coefficient.

公开(公告)号：US20240284120A1

公开(公告)日：2024-08-22

申请号：US18110860

申请日：2023-02-16

Applicant: AAC Technologies Pte. Ltd.

Inventor： KianHeng Goh ,  Chungmin Li ,  Qiang Dan ,  Kahkeen Lai

IPC: H04R17/00 ,  H04R31/00

CPC classification number: H04R17/005 ,  H04R31/006

Abstract: An acoustic transducer includes: substrate including first silicon layer, first oxide layer and second silicon layer, back chamber is formed therethrough; second oxide layer on the substrate; piezoelectric unit on the second oxide layer and including first electrode layer, piezoelectric layer and second electrode layer; slit and opening formed in the second electrode layer; metal pad stacked on the first electrode layer at the opening; and additional film layer including first, second and third parts, the first part is in the slit, side wall and bottom wall of the first part form groove, and through slot is formed in the third part to expose metal pad. Compared with the related art, additional film layer is formed by vapor deposition, and the piezoelectric unit can vibrate with maximum displacement and lowest restriction, thereby effectively improving SPL and structural reliability, which is suitable for larger acoustic transducers.

公开(公告)号：US20240284119A1

公开(公告)日：2024-08-22

申请号：US18110845

申请日：2023-02-16

Applicant: AAC Technologies Pte. Ltd.

Inventor： KianHeng Goh ,  Chungmin Li ,  Qiang Dan ,  Kahkeen Lai

IPC: H04R17/00 ,  H04R31/00

CPC classification number: H04R17/005 ,  H04R31/006

Abstract: An acoustic transducer includes: substrate including first silicon layer, first oxide layer and second silicon layer, back chamber is formed therethrough; second oxide layer on the substrate; piezoelectric unit on the second oxide layer and including first electrode layer, piezoelectric layer and second electrode layer; slit and opening formed in the second electrode layer; metal pad stacked on the first electrode layer at the opening; and additional film layer including first and second parts, the first part is lay on the second electrode layer and covers the slit, and the second part is lay on the metal pad, through slot is formed penetrating the second part to expose the metal pad. Compared with the related art, additional film layer is formed by vapor deposition, and the piezoelectric unit can vibrate with maximum displacement and lowest restriction, thereby effectively improving SPL and structural reliability, which is suitable for larger acoustic transducers.

公开(公告)号：US20250133352A1

公开(公告)日：2025-04-24

申请号：US18613135

申请日：2024-03-22

Applicant: AAC Technologies Pte. Ltd.

Inventor： Chungmin Li ,  KianHeng Goh ,  Qiang Dan ,  Kahkeen Lai

IPC: H04R17/02 ,  H04R7/06 ,  H04R31/00

Abstract: Acoustic sensor and manufacturing method. The acoustic sensor includes: a base including a first silicon layer, a first oxide layer and a second silicon layer stacked, and a back cavity; a second oxide layer formed on the base; a piezoelectric unit formed on the second oxide layer and including a first electrode layer, a piezoelectric layer and a second electrode layer stacked; a first slit formed at a middle portion of the second electrode layer and passing the second electrode layer, the piezoelectric layer and the first electrode layer; a second slit formed at a middle portion of the second silicon layer and passing the second silicon layer and the second oxide layer; an additional membrane filled in the first slit and not filled in the second slit. The SPL and structural reliability are effectively improved, and the material type is not limited by dry film type materials.

公开(公告)号：US12267646B2

公开(公告)日：2025-04-01

申请号：US18110860

申请日：2023-02-16

Applicant: AAC Technologies Pte. Ltd.

Inventor： KianHeng Goh ,  Chungmin Li ,  Qiang Dan ,  Kahkeen Lai

IPC: H04R31/00 ,  H04R17/00

Abstract: An acoustic transducer includes: substrate including first silicon layer, first oxide layer and second silicon layer, back chamber is formed therethrough; second oxide layer on the substrate; piezoelectric unit on the second oxide layer and including first electrode layer, piezoelectric layer and second electrode layer; slit and opening formed in the second electrode layer; metal pad stacked on the first electrode layer at the opening; and additional film layer including first, second and third parts, the first part is in the slit, side wall and bottom wall of the first part form groove, and through slot is formed in the third part to expose metal pad.