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公开(公告)号：US20240182291A1
公开(公告)日：2024-06-06
申请号：US18437338
申请日：2024-02-09
申请人： HITACHI, LTD.
发明人： Shun Kumano , Hideki Hasegawa , Masuyuki Suguyama
CPC分类号： B81B3/0072 , B81C1/00666 , H04N23/54 , H04N23/687 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
摘要： The present invention is characterized by involving a light source irradiating the inside of an ion source with light, a camera acquiring intensity as information of scattered light by droplets generated by electrospraying, and a processing device storing, in a storage unit, determination reference information indicating a relationship between a parameter of a channel system of a liquid chromatography device and the intensity, in which the processing device executes: acquiring the intensity from the camera; comparing the acquired intensity with the determination reference information; and determining a failure of a channel system in the liquid chromatography device by detecting a change in the scattered light relative to a value of the determination reference information based on the acquired intensity by comparing the acquired intensity with the determination reference information.
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公开(公告)号：US11847851B2
公开(公告)日：2023-12-19
申请号：US17675832
申请日：2022-02-18
申请人： INVENSENSE, INC.
CPC分类号： G06V40/1306 , B06B1/067 , B06B1/0666 , B81B7/007 , B81C1/00238 , B81C1/00246 , B81C1/00301 , G01H11/08 , B06B2201/70 , B81B2201/0271 , B81B2201/032 , B81B2203/0127 , B81B2207/012 , B81B2207/015 , B81C2201/0105 , B81C2201/0109 , B81C2203/035 , B81C2203/036 , B81C2203/0792
摘要： Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
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公开(公告)号：US11796396B2
公开(公告)日：2023-10-24
申请号：US17216047
申请日：2021-03-29
发明人： Tsai-Hao Hung , Shih-Chi Kuo
CPC分类号： G01K7/32 , B81B3/0008 , B81C1/00944 , B81B2201/0278 , B81B2203/0136 , B81B2203/04 , B81C2201/013 , B81C2201/0105 , B81C2201/0116
摘要： The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.
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4.发明授权公开(公告)号：US09988265B2
公开(公告)日：2018-06-05
申请号：US15243031
申请日：2016-08-22
发明人： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC分类号： B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
摘要： Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
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5.发明申请METHODS AND STRUCTURES FOR THIN-FILM ENCAPSULATION AND CO-INTEGRATION OF SAME WITH MICROELECTRONIC DEVICES AND MICROELECTROMECHANICAL SYSTEMS (MEMS) 审中-公开微电子器件和微电子系统（MEMS）的薄膜封装和共同组合的方法和结构公开(公告)号：US20160362295A1
公开(公告)日：2016-12-15
申请号：US15246278
申请日：2016-08-24
CPC分类号： B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227 , H05K999/99
摘要： Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.
摘要翻译： 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。
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公开(公告)号：US20240359973A1
公开(公告)日：2024-10-31
申请号：US18028567
申请日：2022-04-27
发明人： Yingli SHI , Chao ZHOU , Yanzhao LI
CPC分类号： B81B7/02 , B81C1/00142 , H01H59/0009 , H01P1/122 , B81B2201/01 , B81B2203/0109 , B81B2203/0323 , B81B2203/0353 , B81C2201/0105
摘要： A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.
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公开(公告)号：US12037239B2
公开(公告)日：2024-07-16
申请号：US17206116
申请日：2021-03-18
IPC分类号： B81C1/00 , B06B1/06 , B81B3/00 , H10N30/06 , H10N30/074 , H10N30/093 , H10N30/87 , H10N39/00 , H10N30/853 , H10N30/88
CPC分类号： B81C1/00246 , B06B1/06 , B81B3/0021 , H10N30/06 , H10N30/074 , H10N30/875 , H10N39/00 , B81B2201/0271 , B81B2201/032 , B81B2207/015 , B81B2207/096 , B81B2207/115 , B81C2201/0105 , B81C2203/0735 , B81C2203/0771 , H10N30/093 , H10N30/853 , H10N30/883
摘要： A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.
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公开(公告)号：US20240199413A1
公开(公告)日：2024-06-20
申请号：US18594647
申请日：2024-03-04
申请人： X-Celprint Limited
发明人： Pierluigi Rubino
IPC分类号： B81C1/00
CPC分类号： B81C1/00039 , B81C1/00523 , B81C1/00555 , B81C2201/0105 , B81C2201/013
摘要： A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be 10 any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.
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公开(公告)号：US20240182292A1
公开(公告)日：2024-06-06
申请号：US18437345
申请日：2024-02-09
发明人： Ting-Jung Chen
CPC分类号： B81B3/0072 , B81C1/00666 , H04N23/54 , H04N23/687 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
摘要： The present disclosure relates to an integrated chip structure. The integrated chip structure includes a MEMS (microelectromechanical systems) actuator. The MEMS actuator has an anchor. A proof mass continuously wraps around the anchor in a closed loop. One or more curved cantilevers are coupled between the proof mass and a frame. The frame wraps around the proof mass. The one or more curved cantilevers include curved outer surfaces arranged directly between a sidewall of the frame and a sidewall of the proof mass, as viewed in a top-view.
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公开(公告)号：US20240051819A1
公开(公告)日：2024-02-15
申请号：US18073472
申请日：2022-12-01
发明人： Ping-He Chang , Kahkeen Lai
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81C2201/0105 , B81C2201/0132 , B81C2201/0133 , B81C2203/0172
摘要： A method for manufacturing a MEMS device and the MEMS device are provided. The method includes: depositing a film on at least a part of a surface of a sacrificial layer, defining at least one through hole in the thin film by machining, removing at least a part of a material covered by the thin film in the sacrificial layer, discharging the part of the material removed from the sacrificial layer from the at least one through hole to define a cavity in the sacrificial layer, and depositing a sealing layer on a surface of the thin film facing away from the sacrificial layer to seal the at least one through hole. Compared with the manufacturing method in the related art, the manufacturing method of the disclosure only requires to deposit one layer of thin film, shorten the production period, and has reliable on-site sealing capability.
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