公开(公告)号：US20240418510A1

公开(公告)日：2024-12-19

申请号：US18335991

申请日：2023-06-15

Applicant: AAC Technologies Pte. Ltd.

Inventor： Houming Chong ,  Veronica Tan ,  ZaiXiang Pua ,  Kahkeen Lai ,  Zhan Zhan

IPC: G01C21/16 ,  B81B3/00 ,  B81C1/00

Abstract: An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.

公开(公告)号：US20240336474A1

公开(公告)日：2024-10-10

申请号：US18298311

申请日：2023-04-10

Applicant: AAC Technologies Pte. Ltd.

Inventor： Houming Chong ,  Veronica Tan ,  Zaixiang Pua ,  Kahkeen Lai ,  Zhan Zhan

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5733 ,  G01C19/5769

CPC classification number: B81B3/0037 ,  B81C1/00166 ,  G01C19/5733 ,  G01C19/5769 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2203/0109

Abstract: A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.

公开(公告)号：US20250026630A1

公开(公告)日：2025-01-23

申请号：US18356264

申请日：2023-07-21

Applicant: AAC Technologies Pte. Ltd.

Inventor： Veronica Tan ,  Zhan Zhan ,  Zaixiang Pua ,  Houming Chong ,  Kahkeen Lai

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P15/125

Abstract: An inertial sensor and a method therefor are provided. The inertia sensor includes a first substrate; a first insulation layer stacked on the first substrate; a first conducting layer stacked on the first insulation layer and including first openings; stoppers corresponding to the first openings and embedded into the first openings to close the first openings; a second insulation layer stacked on the first conducting layer and including a cavity; a second conducting layer stacked on the second insulation layer and including second openings; a first bonding structure stacked on the second conducting layer; a second substrate; and a second bonding structure stacked on the second substrate, the second bonding structure and the first bonding structure being bonded together to define a closed space therebetween. Thus, a structure thereof remains stable, thereby minimizing the feature size and bringing more room of device performance improvement.

公开(公告)号：US20240391756A1

公开(公告)日：2024-11-28

申请号：US18323380

申请日：2023-05-24

Applicant: AAC Technologies Pte. Ltd.

Inventor： ZaiXiang Pua ,  Veronica Tan ,  Kahkeen Lai ,  Houming Chong ,  Zhan Zhan

IPC: B81B3/00 ,  B81C1/00

Abstract: An MEMS sensor and a method therefor. The MEMS sensor includes a buried electrode layer; a top electrode layer spaced from the buried electrode layer, a cavity being formed between the buried electrode layer and the top electrode layer; and a device layer received the cavity. The device layer includes movable mass blocks spaced from one another, each of which is supported on the buried electrode layer through a respective anchor portion, a preset gap is formed between each movable mass block and the top electrode layer, and the preset gap formed by one of the movable mass blocks is different from the preset gap formed by another one of the movable mass blocks. This structure allows for greater flexibility in design and provides higher sensitivity and larger actuation force on the sensor, and die size reduction is achieved while achieving more complex designs with higher accuracy and miniaturization.