公开(公告)号：US20140370665A1

公开(公告)日：2014-12-18

申请号：US14477229

申请日：2014-09-04

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Chiara Corvasce ,  Jan Vobecky ,  Yoichi Otani

IPC: H01L29/66 ,  H01L21/283 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L29/66325 ,  H01L21/2251 ,  H01L21/283 ,  H01L21/324 ,  H01L29/0834 ,  H01L29/45 ,  H01L29/456 ,  H01L29/6609 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/8613

Abstract: A method for manufacturing a power semiconductor device is disclosed which can include: providing a wafer of a first conductivity type; and applying on a second main side of the wafer at least one of a dopant of the first conductivity type for forming a layer of the first conductivity type and a dopant of a second conductivity type for forming a layer of the second conductivity type. A Titanium layer with a metal having a melting point above 1300° C. is then deposited on the second main side. The Titanium deposition layer is annealed so that simultaneously an intermetal compound layer is formed at the interface between the Titanium deposition layer and the wafer and the dopant is diffused into the wafer. A first metal electrode layer is created on the second main side.

Abstract translation: 公开了一种用于制造功率半导体器件的方法，其可以包括：提供第一导电类型的晶片; 以及在所述晶片的第二主侧上施加用于形成第一导电类型的第一导电类型的掺杂剂和用于形成第二导电类型的层的第二导电类型的掺杂剂中的至少一种。 然后将具有熔点高于1300℃的金属的钛层沉积在第二主侧上。 钛沉积层进行退火，从而在钛沉积层和晶片之间的界面处同时形成金属间化合物层，并且掺杂剂扩散到晶片中。 在第二主面上形成第一金属电极层。