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1.发明授权公开(公告)号：US07743358B2
公开(公告)日：2010-06-22
申请号：US11203498
申请日：2005-08-13
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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2.发明申请公开(公告)号：US20060248496A1
公开(公告)日：2006-11-02
申请号：US11203498
申请日：2005-08-13
IPC分类号： G06F17/10
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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3.发明授权公开(公告)号：US08122389B2
公开(公告)日：2012-02-21
申请号：US12690791
申请日：2010-01-20
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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4.发明申请公开(公告)号：US20100186000A1
公开(公告)日：2010-07-22
申请号：US12690791
申请日：2010-01-20
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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公开(公告)号：US07568174B2
公开(公告)日：2009-07-28
申请号：US11504928
申请日：2006-08-16
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.
摘要翻译： 当光学邻近校正的结果不能满足可印刷性的设计要求时，确定无需进行光学邻近校正的技术。 所公开的实施例应用于制造光掩模的方法，该光掩模用于通过用光辐射曝光来在晶片上印刷图案以将晶片上的光掩模光学成像。 提出了一种用于检查建议用于定义光掩模的目标布局的可印刷性的方法，包括以下步骤：导出表示相对于目标布局的一组设计要求的不等式系统; 并通过确定不等式系统是否可行来检查目标布局的可印刷性。
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公开(公告)号：US07913197B1
公开(公告)日：2011-03-22
申请号：US12035413
申请日：2008-02-21
CPC分类号： G03F7/70466 , G03F7/70475
摘要： According to various embodiments of the invention systems and methods for multiple pattern lithography, wherein a target layout pattern that is not capable of being printed in one lithography step is decomposed into multiple patterns that are printable in one lithography operation and, when appropriate, a continuous junction is utilized for where patterns overlap. In a further embodiment, where a continuous junction is not utilized, a splice is utilized at overlap locations. In yet another embodiment, where splices are utilized for overlap locations, identifying where critical nets are located in the target layout pattern, determining how close a component of the critical net is to a splice, and changing the target layout pattern as to avoid the condition of a component of the critical net being in proximity to a splice. In another embodiment of the invention, where splices are utilized at overlap locations, placing a landing pad of contacts or vias at the same location as the splice.
摘要翻译： 根据本发明的各种实施例，用于多图案光刻的系统和方法，其中不能在一个光刻步骤中打印的目标布局图案被分解成可在一个光刻操作中可打印的多个图案，并且在适当时将其连续 结点用于图案重叠的位置。 在另一实施例中，在不使用连续结的情况下，在重叠位置处使用接头。 在另一个实施例中，其中接头用于重叠位置，识别关键网位于目标布局图案中的位置，确定关键网络的部件对拼接有多接近，并且改变目标布局图案以避免条件 关键网的组件位于接头附近。 在本发明的另一个实施例中，其中在重叠位置处使用接头时，将接触点或通孔的接合垫放置在与接头相同的位置处。
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7.发明申请Method of compensating photomask data for the effects of etch and lithography processes 有权补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响公开(公告)号：US20070143733A1
公开(公告)日：2007-06-21
申请号：US11541921
申请日：2006-10-02
申请人： Franz Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
发明人： Franz Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.
摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。
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8.发明授权Method of verifying photomask data based on models of etch and lithography processes 有权基于蚀刻和光刻工艺的模型验证光掩模数据的方法公开(公告)号：US07849423B1
公开(公告)日：2010-12-07
申请号：US11781108
申请日：2007-07-20
CPC分类号： G03F1/36
摘要： A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.
摘要翻译： 通过模拟通过光刻工艺在抗蚀剂层中形成的抗蚀剂图案来模拟对应于目标图案的光掩模数据集，模拟将通过等离子体工艺在层中蚀刻的蚀刻图案，其中所述模拟包括 计算影响特征的颗粒的通量，以及确定蚀刻图案是否基本上符合目标图案。
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9.发明授权Method of compensating photomask data for the effects of etch and lithography processes 有权补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响公开(公告)号：US07600212B2
公开(公告)日：2009-10-06
申请号：US11541921
申请日：2006-10-02
申请人： Franz X. Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
发明人： Franz X. Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.
摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。
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公开(公告)号：US20070094634A1
公开(公告)日：2007-04-26
申请号：US11504928
申请日：2006-08-16
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.
摘要翻译： 当光学邻近校正的结果不能满足可印刷性的设计要求时，确定无需进行光学邻近校正的技术。 所公开的实施例应用于制造光掩模的方法，该光掩模用于通过用光辐射曝光来在晶片上印刷图案以将晶片上的光掩模光学成像。 提出了一种用于检查建议用于定义光掩模的目标布局的可印刷性的方法，包括以下步骤：导出表示相对于目标布局的一组设计要求的不等式系统; 并通过确定不等式系统是否可行来检查目标布局的可印刷性。
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