BOND PADS FOR LOW TEMPERATURE HYBRID BONDING

    公开(公告)号:US20210183810A1

    公开(公告)日:2021-06-17

    申请号:US17189324

    申请日:2021-03-02

    Abstract: Various chip stacks and methods and structures of interconnecting the same are disclosed. In one aspect, an apparatus is provided that includes a first semiconductor chip that has a first glass layer and plural first groups of plural conductor pads in the first glass layer. Each of the plural first groups of conductor pads is configured to bumplessly connect to a corresponding second group of plural conductor pads of a second semiconductor chip to make up a first interconnect of a plurality interconnects that connect the first semiconductor chip to the second semiconductor chip. The first glass layer is configured to bond to a second glass layer of the second semiconductor chip.

    MOLDED CHIP PACKAGE WITH ANCHOR STRUCTURES

    公开(公告)号:US20220319871A1

    公开(公告)日:2022-10-06

    申请号:US17843938

    申请日:2022-06-17

    Abstract: Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package includes a package substrate that has a first side and a second side opposite to the first side. A semiconductor chip is mounted on the first side. Plural metal anchor structures are coupled to the package substrate and project away from the first side. A molding layer is on the package substrate and at least partially encapsulates the semiconductor chip and the anchor structures. The anchor structures terminate in the molding layer and anchor the molding layer to the package substrate.

    LOW TEMPERATURE HYBRID BONDING
    3.
    发明公开

    公开(公告)号:US20230201952A1

    公开(公告)日:2023-06-29

    申请号:US17563830

    申请日:2021-12-28

    CPC classification number: B23K20/02 B23K20/24 B23K2101/40

    Abstract: A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

    SEMICONDUCTOR CHIP WITH REDUCED PITCH CONDUCTIVE PILLARS

    公开(公告)号:US20210193604A1

    公开(公告)日:2021-06-24

    申请号:US17195046

    申请日:2021-03-08

    Abstract: Various semiconductor chips and packages are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a side, and plural conductive pillars on the side. Each of the conductive pillars includes a pillar portion that has an exposed shoulder facing away from the semiconductor chip. The shoulder provides a wetting surface to attract melted solder. The pillar portion has a first lateral dimension at the shoulder. A solder cap is positioned on the pillar portion. The solder cap has a second lateral dimension smaller than the first lateral dimension.

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