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公开(公告)号:US20210193604A1
公开(公告)日:2021-06-24
申请号:US17195046
申请日:2021-03-08
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: PRIYAL SHAH , MILIND S. BHAGAVAT , LEI FU
IPC: H01L23/00
Abstract: Various semiconductor chips and packages are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a side, and plural conductive pillars on the side. Each of the conductive pillars includes a pillar portion that has an exposed shoulder facing away from the semiconductor chip. The shoulder provides a wetting surface to attract melted solder. The pillar portion has a first lateral dimension at the shoulder. A solder cap is positioned on the pillar portion. The solder cap has a second lateral dimension smaller than the first lateral dimension.
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公开(公告)号:US20210313269A1
公开(公告)日:2021-10-07
申请号:US17323454
申请日:2021-05-18
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: MILIND S. BHAGAVAT , RAHUL AGARWAL , CHIA-HAO CHENG
IPC: H01L23/528 , H01L23/31 , H01L23/522 , H01L23/00 , H01L21/56 , H01L25/065
Abstract: Various semiconductor chip devices and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a first redistribution layer (RDL) structure having a first plurality of conductor traces, a first molding layer on the first RDL structure, plural conductive pillars in the first molding layer, each of the conductive pillars including a first end and a second end, a second RDL structure on the first molding layer, the second RDL structure having a second plurality of conductor traces, and wherein some of the conductive pillars are electrically connected between some of the first plurality of conductor traces and some of the second plurality of conductor traces to provide a first inductor coil.
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公开(公告)号:US20210183810A1
公开(公告)日:2021-06-17
申请号:US17189324
申请日:2021-03-02
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: PRIYAL SHAH , MILIND S. BHAGAVAT
IPC: H01L23/00
Abstract: Various chip stacks and methods and structures of interconnecting the same are disclosed. In one aspect, an apparatus is provided that includes a first semiconductor chip that has a first glass layer and plural first groups of plural conductor pads in the first glass layer. Each of the plural first groups of conductor pads is configured to bumplessly connect to a corresponding second group of plural conductor pads of a second semiconductor chip to make up a first interconnect of a plurality interconnects that connect the first semiconductor chip to the second semiconductor chip. The first glass layer is configured to bond to a second glass layer of the second semiconductor chip.
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公开(公告)号:US20230047285A1
公开(公告)日:2023-02-16
申请号:US17978389
申请日:2022-11-01
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: MILIND S. BHAGAVAT , RAHUL AGARWAL
Abstract: Various circuit boards with mounted passive components and method of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes at least partially encapsulating a first plurality of passive components in a molding material to create a first molded passive component group. The first molded passive component group is mounted on a surface of a circuit board. The first plurality of passive components are electrically connected to the circuit board.
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公开(公告)号:US20220189879A1
公开(公告)日:2022-06-16
申请号:US17122571
申请日:2020-12-15
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: RAHUL AGARWAL , MILIND S. BHAGAVAT
IPC: H01L23/538 , H01L23/00
Abstract: A method of manufacturing a semiconductor device includes mounting an interconnect chip to a redistribution layer structure and mounting a first, second, and third semiconductor chip to the redistribution layer structure, where the second semiconductor chip is interposed between the first and the third semiconductor chips, and the interconnect chip communicatively couples the first, second and third, semiconductor chips to one another.
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公开(公告)号:US20220102276A1
公开(公告)日:2022-03-31
申请号:US17032544
申请日:2020-09-25
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: RAHUL AGARWAL , MILIND S. BHAGAVAT
IPC: H01L23/538 , H01L23/00
Abstract: A chip for hybrid bridged fanout chiplet connectivity, the chip comprising: a central chiplet; one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces; and one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs).
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公开(公告)号:US20220319871A1
公开(公告)日:2022-10-06
申请号:US17843938
申请日:2022-06-17
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: PRIYAL SHAH , MILIND S. BHAGAVAT , BRETT P. WILKERSON , LEI FU , RAHUL AGARWAL
Abstract: Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package includes a package substrate that has a first side and a second side opposite to the first side. A semiconductor chip is mounted on the first side. Plural metal anchor structures are coupled to the package substrate and project away from the first side. A molding layer is on the package substrate and at least partially encapsulates the semiconductor chip and the anchor structures. The anchor structures terminate in the molding layer and anchor the molding layer to the package substrate.
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公开(公告)号:US20220059425A1
公开(公告)日:2022-02-24
申请号:US17516988
申请日:2021-11-02
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: JOHN WUU , SAMUEL NAFFZIGER , PATRICK J. SHYVERS , MILIND S. BHAGAVAT , KAUSHIK MYSORE , BRETT P. WILKERSON
IPC: H01L23/367 , H01L25/00 , H01L25/065 , H01L23/36
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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公开(公告)号:US20210050223A1
公开(公告)日:2021-02-18
申请号:US17087388
申请日:2020-11-02
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: RAHUL AGARWAL , MILIND S. BHAGAVAT , IVOR BARBER , VENKATACHALAM VALLIAPPAN , YUEN TING CHENG , GUAN SIN CHOK
IPC: H01L21/322 , H01L29/34 , H01L21/268
Abstract: Various semiconductor chips with gettering regions and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a first side and a second side opposite the first side. The first side has a plurality of laser ablation craters. Each of the ablation craters has a bottom. A gettering region is in the semiconductor chip beneath the laser ablation craters. The gettering region includes plural structural defects. At least some of the structural defects emanate from at least some of the bottoms of the laser ablation craters.
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