Homogenizer, illuminating optical system, and illuminator

    公开(公告)号:US11378877B2

    公开(公告)日:2022-07-05

    申请号:US17021482

    申请日:2020-09-15

    Applicant: AGC INC.

    Abstract: A homogenizer includes a convex-lens array pair including a first convex-lens array disposed on a light entrance side and a second convex-lens array disposed on a light emission side. The first convex-lens array and the second convex-lens array are disposed so as to face each other such that each of the convex-lens arrays has a lens surface opposed to each other outward or inward. The first convex-lens array includes a plurality of first convex lenses in an array arrangement. The second convex-lens array includes a plurality of second convex lenses in an array arrangement. The first convex lens has an average internal transmission angle for incident light entering a lens-surface center region in the lens cross-section and being in parallel with the symmetry axis being equal to or more than 1.3 times an average internal transmission angle of a spherical convex lens.

    Optical filter and imaging device

    公开(公告)号:US10228500B2

    公开(公告)日:2019-03-12

    申请号:US15466118

    申请日:2017-03-22

    Applicant: AGC Inc.

    Abstract: An optical filter includes: an absorption layer containing a first near-infrared absorbent having a maximum absorption in a wavelength of 660 to 785 nm, and satisfying (i-1) in 620 to 670 nm, on a shorter wavelength side of a wavelength λ (DA_Tmin) exhibiting the maximum absorption, there is a wavelength λSh (DA_T50%) at which a transmittance becomes 50%; and a reflection layer formed of a dielectric multilayered film satisfying (ii-1) in 670 to 1200 nm, there is a near-infrared reflection band in which a transmittance with respect to light at an incident angle of 0° becomes 50% or less, and a wavelength λSh (A2_Ts50%) at which a transmittance of light of an s polarization component out of light at an incident angle of 30° becomes 50%, on a shorter wavelength side of the near-infrared reflection band, is positioned on a longer wavelength side of the wavelength λSh (DA_T50%).

    Optical filter and imaging device

    公开(公告)号:US10746908B2

    公开(公告)日:2020-08-18

    申请号:US15819670

    申请日:2017-11-21

    Applicant: AGC Inc.

    Abstract: There is provide an optical filter suppressed in incidence angle dependence and having high visible light transmittance. The optical filter includes: an absorption layer containing a first near-infrared absorbent (DA) having a maximum absorption wavelength λ(DA_Tmin) in wavelengths of 685 to 715 nm and a second near-infrared absorbent (DB) having a maximum absorption wavelength λ(DB_Tmin) in wavelengths of 705 to 725 nm or wavelengths of more than 725 nm and 900 nm or less on a side of a wavelength longer than the maximum absorption wavelength λ(DA_Tmin), and satisfying specific light absorption characteristics; and a reflection layer including a dielectric multilayer film satisfying specific reflection characteristics in wavelengths of 700 to 1150 nm, wherein a transmittance of the reflection layer in a boundary region of visible light and near-infrared light and a transmittance of the absorption layer have a specific relation.

    Near-infrared cut filter and solid-state imaging device

    公开(公告)号:US10310150B2

    公开(公告)日:2019-06-04

    申请号:US15279688

    申请日:2016-09-29

    Applicant: AGC Inc.

    Abstract: There are provided a near-infrared cut filter having a sufficient near-infrared blocking property and being capable of reducing or preventing, in a solid-state imaging device using the near-infrared cut filter, occurrence of a phenomenon that an object which did not exist on the original subject appears in a taken image, and also a highly sensitive solid-state imaging device having the near-infrared cut filter. A near-infrared cut filter includes a stack having a near-infrared absorbing glass substrate and a near-infrared absorbing layer containing a near-infrared absorbing dye and a transparent resin on at least one main surface of the near-infrared absorbing glass substrate, and a dielectric multilayer film formed on at least one main surface of the stack, wherein maximum transmittance at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.

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