公开(公告)号：US11165002B2

公开(公告)日：2021-11-02

申请号：US16630743

申请日：2017-08-30

Applicant: Soko Kagaku Co., Ltd. ,  AGC INC.

Inventor： Akira Hirano ,  Yosuke Nagasawa ,  Masamichi Ippommatsu ,  Ko Aosaki ,  Yuki Suehara ,  Yoshihiko Sakane

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62

Abstract: A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

公开(公告)号：US11107961B2

公开(公告)日：2021-08-31

申请号：US16753714

申请日：2017-11-02

Applicant: Soko Kagaku Co., Ltd. ,  AGC INC.

Inventor： Akira Hirano ,  Yosuke Nagasawa ,  Masamichi Ippommatsu ,  Ko Aosaki ,  Yuki Suehara ,  Yoshihiko Sakane

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/56 ,  H01L33/62

Abstract: The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

公开(公告)号：US10388834B2

公开(公告)日：2019-08-20

申请号：US15736253

申请日：2016-08-02

Applicant: Soko Kagaku Co., Ltd. ,  AGC INC.

Inventor： Akira Hirano ,  Ko Aosaki

IPC: H01L33/00 ,  H01L33/44 ,  H01L21/288 ,  H01L33/56 ,  H01L33/32 ,  H01L33/38

Abstract: To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate 12, each element including a semiconductor laminated portion 21 constituted by an n-type AlGaN layer 16, an active layer 17 composed of an AlGaN layer, and p-type AlGaN layers 19 and 20, an n-electrode 23, a p-electrode 22, a protective insulating film 24, first and second plated electrodes 25 and 26, and a fluororesin film 27. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region R1 and the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R2. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode. The first plated electrode is spaced apart from the second plated electrode, contacts the p-electrode, and covers an upper surface and an entire outer circumferential side surface of the first region R1 and a part of the second region R2 that contacts the first region R1. The second plated electrode contacts the n-electrode and the fluororesin film 27 covers side wall surfaces of the first and second plated electrodes and a bottom surface of a gap part 31.

公开(公告)号：US10361346B2

公开(公告)日：2019-07-23

申请号：US15757203

申请日：2015-10-27

Applicant: Soko Kagaku Co., Ltd. ,  AGC INC.

Inventor： Akira Hirano ,  Ko Aosaki

IPC: H01L31/0312 ,  H01L33/56 ,  H01L33/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L33/54

Abstract: A nitride semiconductor ultraviolet light emitting device 1 is configured such that a nitride semiconductor ultraviolet light emitting element 10 is mounted on a base 30 by flip-chip mounting and sealed with an amorphous fluororesin whose terminal functional group is perfluoroalkyl group. The nitride semiconductor ultraviolet light emitting element 10 includes a sapphire substrate 11, a semiconductor laminated portion 12 of an AlGaN-based semiconductor laminated on a front surface of the sapphire substrate 11, an n electrode 13, a p electrode 14 and a back surface covering layer 15 which is formed on a back surface of the sapphire substrate 11 and transmits ultraviolet light. The back surface covering layer 15 has apertures 16 through which a part of the back surface of the sapphire substrate 11 is exposed, the apertures 16 is uniformly dispersed or distributed on the back surface of the sapphire substrate, a cross-sectional shape of the apertures 16 vertical to the back surface of the sapphire substrate 11 has a portion where an aperture width of a part close to the back surface is wider than an aperture width of a part far from the back surface, and the amorphous fluororesin covers the front surface of the back surface covering layer 15 and fills insides of the apertures 16.

公开(公告)号：US11731900B2

公开(公告)日：2023-08-22

申请号：US17167212

申请日：2021-02-04

Applicant: AGC Inc.

Inventor： Shunsuke Sadakane ,  Ryota Nakamura ,  Akira Hirano

IPC: B32B15/04 ,  B32B17/06 ,  C03C17/36 ,  B60J1/00 ,  B60J1/08 ,  C03C17/32 ,  C03C17/38 ,  B32B17/10 ,  C03C17/06

CPC classification number: C03C17/3644 ,  B32B17/10165 ,  B32B17/10192 ,  B32B17/10431 ,  B60J1/002 ,  B60J1/08 ,  C03C17/06 ,  C03C17/32 ,  C03C17/38 ,  C03C2217/78

Abstract: Glass for a vehicle includes a glass plate; a test-region A demarcated in the glass plate, the test-region A being specified in JIS R3212; a shielding layer provided more outwardly than the test-region A in a plan view; an information transmission/reception region demarcated within an opening portion provided in the shielding layer, and through which a device mounted in the vehicle transmits/receives information; and an infrared reflective layer positioned peripheral to the information transmission/reception region in a plan view, the infrared reflective layer having a portion that overlaps with the shielding layer in a plan view, wherein a solar direct transmittance of the test-region A is 60% or less and a solar direct reflectance of a region in which the infrared reflective layer is provided peripheral to the information transmission/reception region is greater than a solar direct reflectance of the test-region A by at least 5%.

公开(公告)号：US10412829B2

公开(公告)日：2019-09-10

申请号：US15742190

申请日：2016-08-02

Applicant: Soko Kagaku Co., Ltd. ,  AGC INC.

Inventor： Akira Hirano ,  Ko Aosaki

IPC: H05K1/11 ,  H05K1/03 ,  H05K3/28 ,  H01L33/32 ,  H01L33/62 ,  H05K1/09 ,  H05K3/00 ,  H05K3/40 ,  H05K3/46 ,  H01L33/56

Abstract: To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a base 10 that comprises an insulating base material 11 and two or more metal films 12 and 13 that are formed on one side of the insulating base material 11 and electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads. On the one side of the base material 11, along a boundary line between an exposed surface of the base material 11 that is not covered by the metal film 12, 13 and a side wall surface of the metal film 12, 13, at least a first part of the exposed surface of the base material 11 continuous with the boundary line that is sandwiched between two adjacent electrode pads and the side wall surfaces of the metal films 12 and 13 that oppose to each other with the first part interposed therebetween are covered by a fluororesin film 16, and a part of an upper surface of the metal film 12, 13 that composes at least the electrode pad is not covered by the fluororesin film 16.