公开(公告)号：US20240045319A1

公开(公告)日：2024-02-08

申请号：US18380956

申请日：2023-10-17

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hirotomo Kawahara ,  Toshiyuki Uno ,  Ichiro Ishikawa ,  Kenichi Sakaki

IPC: G03F1/24 ,  H01L21/033 ,  G03F1/32

CPC classification number: G03F1/24 ,  H01L21/0337 ,  H01L21/0332 ,  G03F1/32

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.