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    Reflective mask blank for EUV lithography and substrate with conductive film
    1.
    发明授权
    Reflective mask blank for EUV lithography and substrate with conductive film 有权

    公开(公告)号：US12235575B2

    公开(公告)日：2025-02-25

    申请号：US18439057

    申请日：2024-02-12

    Applicant: AGC INC.

    Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

    IPC: G03F1/24

    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH CONDUCTIVE FILM
    2.
    发明公开
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH CONDUCTIVE FILM 审中-公开

    公开(公告)号：US20230350284A1

    公开(公告)日：2023-11-02

    申请号：US18219452

    申请日：2023-07-07

    Applicant: AGC INC.

    Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

    IPC: G03F1/24 ,  G03F7/00

    CPC classification number: G03F1/24 ,  G03F7/70058

    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

    Reflective mask blank for EUV lithography
    3.
    发明授权
    Reflective mask blank for EUV lithography 有权

    公开(公告)号：US12038685B2

    公开(公告)日：2024-07-16

    申请号：US18201705

    申请日：2023-05-24

    Applicant: AGC Inc.

    Inventor： Hirotomo Kawahara ,  Hiroyoshi Tanabe ,  Toshiyuki Uno ,  Hiroshi Hanekawa ,  Daijiro Akagi

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.

    Reflective mask blank and reflective mask
    4.
    发明授权
    Reflective mask blank and reflective mask 有权

    公开(公告)号：US11036127B2

    公开(公告)日：2021-06-15

    申请号：US16056765

    申请日：2018-08-07

    Applicant: AGC INC.

    Inventor： Hirotomo Kawahara ,  Hiroshi Hanekawa ,  Toshiyuki Uno

    IPC: G03F1/24 ,  G03F1/38 ,  G03F1/40 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

    Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

    Reflective mask blank for EUV lithography and substrate with conductive film
    8.
    发明授权
    Reflective mask blank for EUV lithography and substrate with conductive film 有权

    公开(公告)号：US11934093B2

    公开(公告)日：2024-03-19

    申请号：US18219452

    申请日：2023-07-07

    Applicant: AGC INC.

    Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

    Reflective mask blank for EUV lithography
    9.
    发明授权
    Reflective mask blank for EUV lithography 有权

    公开(公告)号：US11698580B2

    公开(公告)日：2023-07-11

    申请号：US17235220

    申请日：2021-04-20

    Applicant: AGC Inc.

    Inventor： Hirotomo Kawahara ,  Hiroyoshi Tanabe ,  Toshiyuki Uno ,  Hiroshi Hanekawa ,  Daijiro Akagi

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.

    Glass plate with antireflection film
    10.
    发明授权
    Glass plate with antireflection film 有权

    公开(公告)号：US10654746B2

    公开(公告)日：2020-05-19

    申请号：US15986990

    申请日：2018-05-23

    Applicant: AGC Inc.

    Inventor： Hirotomo Kawahara ,  Kenichi Suzuki ,  Nobutaka Aomine

    IPC: C03C17/34 ,  G02B1/115 ,  B32B7/023 ,  B32B17/10

    Abstract: Provided is a glass sheet with an antireflection film: containing a glass sheet, a first transparent high refractive index layer located on the glass sheet, a first transparent low refractive index layer located on the first transparent high refractive index layer, a second transparent high refractive index layer located on the first transparent low refractive index layer, and a second transparent low refractive index layer located on the second transparent high refractive index layer; having a haze after heating at 600° C. to 700° C. for 15 minutes being 0.4% or less; and having a visible light reflectance measured from the side of the second transparent low refractive index layer based on JIS R 3106 being 1.0% or less.

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