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公开(公告)号：US11698580B2
公开(公告)日：2023-07-11
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
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公开(公告)号：US12216398B2
公开(公告)日：2025-02-04
申请号：US18417352
申请日：2024-01-19
Applicant: AGC INC.
Inventor： Hiroyoshi Tanabe , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX−(i×6+1) nm≤dbi≤dbi MAX−(i×6−1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi MAX ( nm ) = 13.53 2 n cos 6 ° { INT ( 0.58 1 - n 1 ) + 1 2 π ( tan - 1 ( - k 2 1 - n 2 ) + 0.64 ) } , where n1 is a refractive index of the lower absorbent layer, n2 is a refractive index of the upper absorbent layer, k2 is an absorption coefficient of the upper absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
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公开(公告)号：US12038685B2
公开(公告)日：2024-07-16
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
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公开(公告)号：US11036127B2
公开(公告)日：2021-06-15
申请号：US16056765
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
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公开(公告)号：US12216397B2
公开(公告)日：2025-02-04
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , H01L21/02
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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Patent Agency Ranking
公开(公告)号：US12124164B2
公开(公告)日：2024-10-22
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Takuma Kato , Keishi Tsukiyama , Toshiyuki Uno , Hiroshi Hanekawa , Ryusuke Oishi , Sadatatsu Ikeda , Yukihiro Iwata , Chikako Hanzawa
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
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公开(公告)号：US11822229B2
公开(公告)日：2023-11-21
申请号：US17382755
申请日：2021-07-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , G03F1/26 , G03F1/52
CPC classification number: G03F1/24 , G03F1/32 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US12298660B2
公开(公告)日：2025-05-13
申请号：US18596919
申请日：2024-03-06
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Daijiro Akagi , Hiroaki Iwaoka , Toshiyuki Uno , Michinori Suehara , Keishi Tsukiyama
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
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公开(公告)号：US11982935B2
公开(公告)日：2024-05-14
申请号：US17529124
申请日：2021-11-17
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroshi Hanekawa , Toshiyuki Uno , Masafumi Akita
IPC: G03F1/24 , G03F1/52 , H01L21/027 , H01L21/033
CPC classification number: G03F1/24 , G03F1/52 , H01L21/0274 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
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公开(公告)号：US11953822B2
公开(公告)日：2024-04-09
申请号：US18198881
申请日：2023-05-18
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Daijiro Akagi , Hiroaki Iwaoka , Toshiyuki Uno , Michinori Suehara , Keishi Tsukiyama
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
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