PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME

    公开(公告)号:US20240032429A1

    公开(公告)日:2024-01-25

    申请号:US18044493

    申请日:2021-09-23

    CPC classification number: H10N30/2047 H10N30/853 H10N30/076

    Abstract: Various embodiments may relate to a piezoelectric device. The piezoelectric device may include a substrate, and a layered stacked arrangement anchored to the substrate. The layered stacked arrangement may include a piezoelectric layer. The stacked arrangement may also include a first electrode on a first side of the piezoelectric layer. The stacked arrangement may further include a second electrode on a second side of the piezoelectric layer opposite the first side. The piezoelectric layer may include a first region including one or more dipole domains of a first type, and one or more dipole domains of a second type. The first electrode may be at least partially in contact with the first region and at least partially in contact with the second region.

    Acoustic Resonator and Method of Forming the Same

    公开(公告)号:US20240023446A1

    公开(公告)日:2024-01-18

    申请号:US18258347

    申请日:2021-02-03

    Abstract: Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The acoustic resonator may further include a plurality of dielectric structures in contact with the first surface of the piezoelectric layer. The acoustic resonator may additionally include a second electrode in contact with a second surface of the piezoelectric layer opposite the first surface. The first electrode may include a plurality of electrode structures. A dielectric structure of the plurality of dielectric structures may be in contact with a pair of neighboring electrode structures of the plurality of electrode structures.

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