公开(公告)号：US20160211029A1

公开(公告)日：2016-07-21

申请号：US14644217

申请日：2015-03-11

申请人： AMIC Technology Corporation

发明人： Hsiao-Hua Lu ,  Chih-Ming Kuo ,  Chih-Lung Chang

IPC分类号： G11C16/26 ,  H01L27/115 ,  H01L29/788 ,  G11C16/14

CPC分类号： H01L29/7883 ,  G11C16/02 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/1156 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/7881

摘要： A non-volatile memory cell comprises a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a program tunneling structure forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.

摘要翻译： 非易失性存储单元包括隧道部分; 耦合装置; 读晶体管; 连接到读取晶体管的第一选择晶体管，以读取模式形成读取晶体管的读取路径; 在擦除模式中形成隧道喷射路径的擦除隧道结构; 以及在程序模式中形成隧道喷射路径的程序隧道结构; 其中读取路径不同于隧道喷射路径和隧道喷射路径。

公开(公告)号：US20240179900A1

公开(公告)日：2024-05-30

申请号：US18086668

申请日：2022-12-22

申请人： AMIC Technology Corporation

发明人： Hsiao-Hua Lu ,  Yung-Tien Peng ,  Chun-Hao Huang

IPC分类号： H10B41/70 ,  H10B41/10 ,  H10B41/35

CPC分类号： H01L27/1156 ,  H01L27/11519 ,  H01L27/11524

摘要： A non-volatile memory cell includes a tunneling part; a coupling transistor, including a coupling gate part, a first conductive region and a second conductive region, wherein the coupling gate part is coupled to the tunneling part and disposed in the first conductive region; a read transistor with a read gate part coupled to the tunneling part for forming an electron tunneling ejection path in an erase mode, and forming an electron tunneling injection path in a program mode; and a select transistor, connected in series with the read transistor, for forming a read path with the read transistor in a read mode.

公开(公告)号：US09496417B2

公开(公告)日：2016-11-15

申请号：US14644217

申请日：2015-03-11

申请人： AMIC Technology Corporation

发明人： Hsiao-Hua Lu ,  Chih-Ming Kuo ,  Chih-Lung Chang

IPC分类号： H01L27/115 ,  G11C16/14 ,  H01L29/788 ,  G11C16/02

CPC分类号： H01L29/7883 ,  G11C16/02 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/1156 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/7881

摘要： A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a program tunneling structure forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.

摘要翻译： 非易失性存储单元包括隧道部分; 耦合装置; 读晶体管; 连接到读取晶体管的第一选择晶体管，以读取模式形成读取晶体管的读取路径; 在擦除模式中形成隧道喷射路径的擦除隧道结构; 以及在程序模式中形成隧道喷射路径的程序隧道结构; 其中读取路径不同于隧道喷射路径和隧道喷射路径。