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公开(公告)号：US11063001B2
公开(公告)日：2021-07-13
申请号：US16564321
申请日：2019-09-09
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu
IPC分类号： H01L23/552 , H01L23/00 , H01L23/31 , H01L21/56 , H01L23/16 , H01L23/538 , H01L23/498
摘要： A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising one or more conductive shielding members and an EMI shielding layer, and a method of manufacturing thereof.
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公开(公告)号：US20240266238A1
公开(公告)日：2024-08-08
申请号：US18594321
申请日：2024-03-04
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/48 , H01L23/522 , H01L23/528
CPC分类号： H01L23/3128 , H01L21/56 , H01L23/481 , H01L23/5226 , H01L23/5283 , H01L24/09
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11574890B2
公开(公告)日：2023-02-07
申请号：US16918074
申请日：2020-07-01
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L23/48 , H01L25/065 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/31
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220415733A1
公开(公告)日：2022-12-29
申请号：US17361686
申请日：2021-06-29
发明人： Kwang Seok Oh , Chang Uk Jang , Jin Seok Ryu , Seung Jae Yu , Weilung Lu , Adrian Arcedera , Seung Mo Kim , Kyung Han Ryu , Yi Seul Han , Woo Jun Kim , Tae Yong Lee
摘要： In one example, an electronic device comprises a cavity substrate comprising a substrate base comprising a top side and a bottom side and a cavity wall over the substrate base and defining a cavity, an electronic component over the substrate base and in the cavity, a lid comprising a top side and a bottom side, wherein the lid is over the substrate base and the cavity wall to define an interior of the cavity and an exterior of the cavity, an adhesive between the bottom side of the lid and a top side of the cavity wall, and a vent seal between the interior of the cavity and the exterior of the cavity. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11830823B2
公开(公告)日：2023-11-28
申请号：US17015147
申请日：2020-09-09
发明人： Tae Ki Kim , Jae Beom Shim , Min Jae Yi , Yi Seul Han , Young Ju Lee , Kyeong Tae Kim
IPC分类号： H01L23/00 , H01L23/31 , H01L23/16 , H01L23/538 , H01L23/552 , H01L21/48 , H01L21/56
CPC分类号： H01L23/562 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L23/16 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L23/552 , H01L24/16 , H01L2224/16227 , H01L2924/3025 , H01L2924/3512
摘要： In one example, an electronic device includes a substrate having a conductive structure. The conductive structure includes a substrate inward terminal at a first side of the substrate and a substrate outward terminal at a second side of the substrate. The substrate includes a dielectric structure with a first opening is at the second side. An electronic component is at the first side of the substrate and is electrically coupled to the substrate inward terminal, and an encapsulant encapsulates the electronic component. The substrate outward terminal comprises one of a multi-via terminal or a multi-stage via. The multi-via terminal includes pad conductive vias in the first opening a pad dielectric via interposed between the pad conductive vias in the first opening and a conductor comprising a conductor top side with micro dimples over the pad conductive vias and the pad dielectric via. The multi-stage terminal includes a pad base within the first opening having a pad base top side recessed below an upper surface the first dielectric and a pad head coupled to the pad base within the first opening, the pad head having a pad head top side with a micro dimple. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20230187410A1
公开(公告)日：2023-06-15
申请号：US18105970
申请日：2023-02-06
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/065 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/31
CPC分类号： H01L25/0655 , H01L23/49822 , H01L23/49833 , H01L21/561 , H01L23/5385 , H01L21/563 , H01L23/3128
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20210280484A1
公开(公告)日：2021-09-09
申请号：US17327979
申请日：2021-05-24
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11018067B2
公开(公告)日：2021-05-25
申请号：US16419650
申请日：2019-05-22
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11557524B2
公开(公告)日：2023-01-17
申请号：US17327979
申请日：2021-05-24
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220005787A1
公开(公告)日：2022-01-06
申请号：US16918074
申请日：2020-07-01
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/065 , H01L23/498 , H01L23/31 , H01L23/538 , H01L21/56
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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