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公开(公告)号：US11557524B2
公开(公告)日：2023-01-17
申请号：US17327979
申请日：2021-05-24
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20200373214A1
公开(公告)日：2020-11-26
申请号：US16419650
申请日：2019-05-22
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L23/48 , H01L23/528 , H01L23/522 , H01L21/56
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20240266238A1
公开(公告)日：2024-08-08
申请号：US18594321
申请日：2024-03-04
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/48 , H01L23/522 , H01L23/528
CPC分类号： H01L23/3128 , H01L21/56 , H01L23/481 , H01L23/5226 , H01L23/5283 , H01L24/09
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220238441A1
公开(公告)日：2022-07-28
申请号：US17720211
申请日：2022-04-13
发明人： Tae Ki Kim , Jae Beom Shim , Seung Nam Son , Won Chul Do
IPC分类号： H01L23/528 , H01L23/00 , H01L23/31 , H01L21/56
摘要： In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11355470B2
公开(公告)日：2022-06-07
申请号：US16802614
申请日：2020-02-27
发明人： Ji Yeon Ryu , Jae Beom Shim , Tae Yong Lee , Byong Jin Kim
IPC分类号： H01L23/00 , H01L23/31 , H01L23/367 , H01L21/48 , H01L21/56 , H01L23/492 , H01L23/433 , H01L23/495
摘要： In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11121077B2
公开(公告)日：2021-09-14
申请号：US16507365
申请日：2019-07-10
发明人： Ji Yeon Ryu , Jae Beom Shim
IPC分类号： H01L23/522 , H01L23/00 , H01L23/31
摘要： In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11990411B2
公开(公告)日：2024-05-21
申请号：US17720211
申请日：2022-04-13
发明人： Tae Ki Kim , Jae Beom Shim , Seung Nam Son , Won Chul Do
IPC分类号： H01L23/528 , H01L21/56 , H01L23/00 , H01L23/31
CPC分类号： H01L23/5283 , H01L21/563 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L24/09 , H01L24/17 , H01L2224/0231 , H01L2224/02373 , H01L2224/02381 , H01L2224/0401
摘要： In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11978687B2
公开(公告)日：2024-05-07
申请号：US18096914
申请日：2023-01-13
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/48 , H01L23/522 , H01L23/528
CPC分类号： H01L23/3128 , H01L21/56 , H01L23/481 , H01L23/5226 , H01L23/5283 , H01L24/09
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20240096858A1
公开(公告)日：2024-03-21
申请号：US17945414
申请日：2022-09-15
发明人： Kyoung Yeon Lee , Jae Beom Shim , Byong Jin Kim
IPC分类号： H01L25/10 , H01L23/498 , H01L23/538 , H01L25/00 , H01Q1/48 , H01Q9/04
CPC分类号： H01L25/105 , H01L23/49816 , H01L23/5383 , H01L23/5385 , H01L25/50 , H01Q1/48 , H01Q9/0407 , H01L24/16 , H01L2224/16227
摘要： In one example, an electronic device comprises a lower substrate comprising a lower dielectric structure and a lower conductive structure, an electronic component coupled with a bottom side of the lower substrate and coupled with the lower conductive structure, an upper substrate over a top side of the lower substrate and comprising an upper dielectric structure and an upper conductive structure, an internal interconnect between the upper substrate and the lower substrate and coupled with the upper conductive structure and the lower conductive structure, and a first antenna component between the upper substrate and the lower substrate and coupled with the upper conductive structure. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20230253279A1
公开(公告)日：2023-08-10
申请号：US18096914
申请日：2023-01-13
发明人： Kyeong Tae Kim , Yi Seul Han , Jae Beom Shim , Tae Yong Lee
IPC分类号： H01L23/31 , H01L23/00 , H01L21/56 , H01L23/528 , H01L23/522 , H01L23/48
CPC分类号： H01L23/3128 , H01L24/09 , H01L21/56 , H01L23/5283 , H01L23/5226 , H01L23/481
摘要： In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.
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