公开(公告)号：US20170117266A1

公开(公告)日：2017-04-27

申请号：US15346527

申请日：2016-11-08

Applicant: ANALOG DEVICES, INC.

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  Paul Malachy Daly ,  Bernard Patrick Stenson ,  David J. Clarke ,  Andrew David Bain ,  William Allan Lane

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/08 ,  H01L29/40 ,  H01L29/735 ,  H01L29/06

CPC classification number: H01L27/0259 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/36 ,  H01L29/402 ,  H01L29/6625 ,  H01L29/735 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

公开(公告)号：US10043792B2

公开(公告)日：2018-08-07

申请号：US15346527

申请日：2016-11-08

Applicant: ANALOG DEVICES, INC.

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  Paul Malachy Daly ,  Bernard Patrick Stenson ,  David J. Clarke ,  Andrew David Bain ,  William Allan Lane

IPC: H01L21/331 ,  H01L23/60 ,  H01L27/02 ,  H01L29/66 ,  H01L29/735 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.