公开(公告)号：US10043792B2

公开(公告)日：2018-08-07

申请号：US15346527

申请日：2016-11-08

Applicant: ANALOG DEVICES, INC.

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  Paul Malachy Daly ,  Bernard Patrick Stenson ,  David J. Clarke ,  Andrew David Bain ,  William Allan Lane

IPC: H01L21/331 ,  H01L23/60 ,  H01L27/02 ,  H01L29/66 ,  H01L29/735 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

公开(公告)号：US20140097081A1

公开(公告)日：2014-04-10

申请号：US13646940

申请日：2012-10-08

Applicant: ANALOG DEVICES, INC.

Inventor： Michael Noel Morrissey ,  Bernard Patrick Stenson

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/14

CPC classification number: C23C14/34 ,  C23C14/16 ,  C23C14/541 ,  H01C7/006 ,  H01C7/06 ,  H01C17/12 ,  H01C17/232 ,  H01L28/24

Abstract: Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value.

Abstract translation: 公开了形成薄膜的方法。 一种这样的方法可以包括溅射目标材料以形成第一薄膜电阻器并调整沉积参数以调制随后形成的第二薄膜电阻器的性质。 例如，可以调整衬底偏压和/或衬底温度以调节第二薄膜电阻器的性质。 可以通过调节沉积参数来调制第二薄膜电阻器的电阻温度系数（TCR）和/或另一特性。 溅射到基板上的目标材料可以包括例如Cr合金，Ni合金，SiCr，NiCr等。 可以在衬底偏压和/或衬底温度和薄膜电阻器性质之间建立关系，并且该关系可用于选择所需特性值的沉积条件。

公开(公告)号：US09963777B2

公开(公告)日：2018-05-08

申请号：US13646940

申请日：2012-10-08

Applicant: Analog Devices, Inc.

Inventor： Michael Noel Morrissey ,  Bernard Patrick Stenson

IPC: C23C14/00 ,  C23C14/34 ,  H01C17/12 ,  C23C14/16 ,  C23C14/54 ,  H01C7/00 ,  H01C7/06 ,  H01C17/232 ,  H01L49/02

CPC classification number: C23C14/34 ,  C23C14/16 ,  C23C14/541 ,  H01C7/006 ,  H01C7/06 ,  H01C17/12 ,  H01C17/232 ,  H01L28/24

Abstract: Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value.

公开(公告)号：US20170117266A1

公开(公告)日：2017-04-27

申请号：US15346527

申请日：2016-11-08

Applicant: ANALOG DEVICES, INC.

Inventor： Edward John Coyne ,  Patrick Martin McGuinness ,  Paul Malachy Daly ,  Bernard Patrick Stenson ,  David J. Clarke ,  Andrew David Bain ,  William Allan Lane

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/08 ,  H01L29/40 ,  H01L29/735 ,  H01L29/06

CPC classification number: H01L27/0259 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/36 ,  H01L29/402 ,  H01L29/6625 ,  H01L29/735 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.