公开(公告)号：US20240243212A1

公开(公告)日：2024-07-18

申请号：US18576949

申请日：2022-06-24

申请人： ANHUI HUASUN ENERGY CO., LTD.

发明人： Xiaohua XU ,  Ke XIN ,  Su ZHOU ,  Daoren GONG ,  Wenjing WANG ,  Chen LI ,  Mengying CHEN ,  Shangzhi CHENG

IPC分类号： H01L31/077 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/035272 ,  H01L31/182

摘要： A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption.

公开(公告)号：US20240297262A1

公开(公告)日：2024-09-05

申请号：US18574689

申请日：2022-06-24

申请人： ANHUI HUASUN ENERGY CO., LTD.

发明人： Ke XIN ,  Su ZHOU ,  Daoren GONG ,  Wenjing WANG ,  Xiaohua XU ,  Zhigang MEI ,  Long YANG

IPC分类号： H01L31/0224 ,  H01L31/0203 ,  H01L31/0368 ,  H01L31/074 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03685 ,  H01L31/074 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/0203

摘要： A heterojunction solar cell and a preparation method therefor. The heterojunction solar cell comprises: a semiconductor substrate layer; and a back composite transparent conductive film located on one side of the semiconductor substrate layer. The back surface composite transparent conductive film comprises: a first back surface transparent conductive film; and a second back transparent conductive film located on the side surface of the first back transparent conductive film facing away from the semiconductor substrate layer. Both the first back transparent conductive film and the second back transparent conductive film are doped with group III heavy atoms, and the concentration of the group III heavy atoms in the second back transparent conductive film is less than that of the group III heavy atoms in the first back transparent conductive film.