专利检索 ap:("APPLIED MATERIALS, INC.") AND inv:"EDWARD BUDIARTO" 第 1 页

1.

发明公开
FINGERPRINTING AND PROCESS CONTROL OF PHOTOSENSITIVE FILM DEPOSITION CHAMBER 审中-公开

公开(公告)号：US20240027916A1

公开(公告)日：2024-01-25

申请号：US18198073

申请日：2023-05-16

申请人： Applied Materials, Inc.

发明人： RUIYING HAO , TODD EGAN , EDWARD BUDIARTO , PAOLA DE CECCO , REGINA FREED , BEKELE WORKU , MADHUR SACHAN , LUISA BOZANO , KELVIN CHAN

IPC分类号： G03F7/20 , G03F7/00

CPC分类号： G03F7/70491 , G03F7/70653 , G03F7/706843 , G03F7/70808 , G03F7/7085

摘要： Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.

2.

发明申请
METHODS, APPARATUSES AND SYSTEMS FOR CONDUCTIVE FILM LAYER THICKNESS MEASUREMENTS 审中-公开

公开(公告)号：US20190390949A1

公开(公告)日：2019-12-26

申请号：US16432104

申请日：2019-06-05

申请人： APPLIED MATERIALS, INC.

发明人： KAI WU , WEI MIN CHAN , PEIQI WANG , PAUL MA , EDWARD BUDIARTO , KUN XU , TODD J. EGAN

IPC分类号： G01B7/06 , C23C16/52

摘要： A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.