公开(公告)号：US20200300618A1

公开(公告)日：2020-09-24

申请号：US16711005

申请日：2019-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： REGINA FREED ,  RUSSELL CHIN YEE TEO ,  MADHUR SACHAN

IPC: G01B15/00 ,  H01J37/28

Abstract: Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.

公开(公告)号：US20240027916A1

公开(公告)日：2024-01-25

申请号：US18198073

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  TODD EGAN ,  EDWARD BUDIARTO ,  PAOLA DE CECCO ,  REGINA FREED ,  BEKELE WORKU ,  MADHUR SACHAN ,  LUISA BOZANO ,  KELVIN CHAN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/70653 ,  G03F7/706843 ,  G03F7/70808 ,  G03F7/7085

Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.

公开(公告)号：US20190198392A1

公开(公告)日：2019-06-27

申请号：US15853165

申请日：2017-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： AMRITA B. MULLICK ,  ISMAIL EMESH ,  UDAY MITRA ,  ROEY SHAVIV ,  REGINA FREED

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/3213 ,  C23F1/38 ,  C23F1/26

CPC classification number: H01L21/76883 ,  C23F1/26 ,  C23F1/38 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/7684

Abstract: Methods of etching tungsten are disclosed including: leveling a first top surface of a tungsten layer within a feature and atop a top surface of a substrate; and etching the tungsten layer with a peroxide such as hydrogen peroxide and one of a strong acid or a strong base to remove a first portion of the tungsten layer from atop the substrate to form a second top surface of a tungsten layer at a level below the top surface of the substrate. The methods are suitable for forming substantially level or flat top surfaces of a tungsten layer at a level below the top surface of the substrate or within one or more features such as vias or trenches.