公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC: H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.