公开(公告)号：US20150061237A1

公开(公告)日：2015-03-05

申请号：US14534574

申请日：2014-11-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Jennifer SUN ,  Sumanth BANDA ,  Ren-Guan DUAN

IPC: B23B31/28 ,  B23Q3/00 ,  B05B1/14

CPC classification number: B23B31/28 ,  B05B1/14 ,  B23B31/02 ,  B23Q3/00 ,  B32B15/08 ,  C04B35/6269 ,  C04B35/63424 ,  C04B37/005 ,  C04B37/006 ,  C04B37/008 ,  C04B37/025 ,  C04B37/026 ,  C04B37/028 ,  C04B2235/604 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/55 ,  C04B2237/62 ,  H01L21/6831 ,  Y10T156/10 ,  Y10T279/23

Abstract: Embodiments of the present disclosure generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present disclosure provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding material to outgas volatile species from the bonding material. The outgassed volatile species accumulates to at least 0.05% in mass of the bonding material. The method further includes contacting a second component and the enhanced bonding layer to join the first and second components.

Abstract translation: 本公开的实施例通常提供具有增强的热性质的腔室部件和增强包括接合材料的腔室部件的热性能的方法。 本公开的一个实施例提供了一种用于制造复合结构的方法。 该方法包括：向第一部件施加接合材料，并且通过加热接合材料将从第一部件施加的接合材料转化为增强的接合层，从而从接合材料排出挥发性物质。 脱气的挥发性物质在接合材料的质量上累积至少0.05％。 该方法还包括使第二组分和增强的结合层接触以连接第一和第二组分。

公开(公告)号：US20160056059A1

公开(公告)日：2016-02-25

申请号：US14832671

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Jennifer SUN ,  Biraja KANUNGO ,  Sunil SRINIVASAN ,  Jinhan CHOI ,  Anisul H. KHAN

IPC: H01L21/67 ,  F27D7/06 ,  F27D21/00 ,  B28B11/08

CPC classification number: F27D21/0014 ,  B28B11/0872 ,  F27D7/06 ,  H01J37/32477 ,  H01L21/68757 ,  H01L21/68785

Abstract: Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches.

Abstract translation: 本公开的实例一般涉及用于半导体处理室的部件，其包括具有包括第一表面和第二表面的加工表面的主体。 第一表面被配置为与半导体处理室的支撑构件相接合。 第二表面被配置为面对半导体处理室的处理区域。 第二表面的处理区域包括比加工表面的未处理区域相对平坦的峰值，并且表现出1至30微英寸之间的平均粗糙度。