公开(公告)号：US20140162194A1

公开(公告)日：2014-06-12

申请号：US13897270

申请日：2013-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingjing XU ,  Joe Griffith CRUZ ,  Pramit MANNA ,  Deenesh PADHI ,  Bok Hoen KIM ,  Barry L. CHIN

IPC: G03F7/16

CPC classification number: G03F7/167 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271

Abstract: Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

Abstract translation: 提供了在光刻和光致抗蚀剂图案化的新工艺序列期间形成牺牲的方法和装置。 在一个实施例中，一种在其上处理具有抗蚀剂材料和抗反射涂层材料的衬底的方法包括：使用CVD技术在处理室内的衬底的表面上沉积有机聚合物层。 CVD技术包括使单体流入处理室的处理区域，通过加热至约200℃至约450℃之间的温度的一根或多根细丝丝将引发剂流入加工区域，并形成有机物 聚合物层。 另外，当从基板的表面去除抗蚀剂材料时，有机聚合物层是可灰化的，并且可以从基板的表面去除。

公开(公告)号：US20130337615A1

公开(公告)日：2013-12-19

申请号：US13902516

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingjing XU ,  Joe Griffith CRUZ

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02277 ,  H01L21/561 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3178 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68372 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/27452 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/81 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a vapor phase organic polymer film deposited using a CVD process at low temperature during a process sequence for wafer-level chip scale packaging (WL-CSP), including system-in package (SiP), Package-on-Package (PoP) and Package-in-Package (PiP).

Abstract translation: 本发明的实施方案提供了在晶片级芯片级封装（WL-CSP）的工艺顺序期间使用CVD工艺在低温下沉积的气相有机聚合物膜，其包括系统化封装（SiP） 软件包（PoP）和软件包包（PiP）。