公开(公告)号：US20160322255A1

公开(公告)日：2016-11-03

申请号：US15206112

申请日：2016-07-08

申请人： Applied Materials, Inc.

发明人： Tony CHIANG ,  Gongda YAO ,  Peijun DING ,  Fusen E. CHEN ,  Barry L. CHIN ,  Gene Y. KOHARA ,  Zheng XU ,  Hong ZHANG

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

摘要翻译： 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻的材料层的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。 使用传统的溅射或离子沉积溅射将第一保护层材料沉积在衬底表面上，结合足够低的衬底偏压，使得施加层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。

公开(公告)号：US20140162194A1

公开(公告)日：2014-06-12

申请号：US13897270

申请日：2013-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Jingjing XU ,  Joe Griffith CRUZ ,  Pramit MANNA ,  Deenesh PADHI ,  Bok Hoen KIM ,  Barry L. CHIN

IPC分类号： G03F7/16

CPC分类号： G03F7/167 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271

摘要： Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

摘要翻译： 提供了在光刻和光致抗蚀剂图案化的新工艺序列期间形成牺牲的方法和装置。 在一个实施例中，一种在其上处理具有抗蚀剂材料和抗反射涂层材料的衬底的方法包括：使用CVD技术在处理室内的衬底的表面上沉积有机聚合物层。 CVD技术包括使单体流入处理室的处理区域，通过加热至约200℃至约450℃之间的温度的一根或多根细丝丝将引发剂流入加工区域，并形成有机物 聚合物层。 另外，当从基板的表面去除抗蚀剂材料时，有机聚合物层是可灰化的，并且可以从基板的表面去除。

公开(公告)号：US20140130739A1

公开(公告)日：2014-05-15

申请号：US14149560

申请日：2014-01-07

申请人： Applied Materials, Inc.

发明人： Barry L. CHIN ,  Alfred W. MAK ,  Lawrence C. LEI ,  Ming XI ,  Hua CHUNG ,  Ken Kaung LAI ,  Jeong Soo BYUN

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。