METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER
    1.
    发明申请
    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER 审中-公开
    用于改善衬底加工室中气体流动的方法和装置

    公开(公告)号:US20150345019A1

    公开(公告)日:2015-12-03

    申请号:US14291807

    申请日:2014-05-30

    Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

    Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中,衬底处理室包括:室主体和限定内部容积的室盖; 衬底支撑件,其设置在所述内部容积内并具有支撑表面以支撑衬底; 气体通道,设置在与基板支撑件相对的盖中,以将气体混合物供应到内部空间,气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

    TARGET CENTER POSITIONAL CONSTRAINT FOR PHYSICAL VAPOR DEPOSITION (PVD) PROCESSING SYSTEMS
    2.
    发明申请
    TARGET CENTER POSITIONAL CONSTRAINT FOR PHYSICAL VAPOR DEPOSITION (PVD) PROCESSING SYSTEMS 审中-公开
    物理气相沉积(PVD)处理系统的目标中心定位约束

    公开(公告)号:US20140061041A1

    公开(公告)日:2014-03-06

    申请号:US13778383

    申请日:2013-02-27

    CPC classification number: C23C14/3407 H01J37/3408 H01J37/3497

    Abstract: Target assemblies for use in a substrate processing system are provided herein. In some embodiments, a target assembly for use in a substrate processing system may include a source material, a backing plate configured to support the source material on a front side of the backing plate, and a central support member to support the target assembly within the substrate processing system, wherein the central support member is coupled to a center portion of the backing plate and extends perpendicularly away from the backside of the backing plate.

    Abstract translation: 本文提供了用于基板处理系统的目标组件。 在一些实施例中,用于基板处理系统的目标组件可以包括源材料,被配置为将支撑材料支撑在背板的前侧上的背板和用于将目标组件支撑在背板内的中心支撑构件 衬底处理系统,其中中央支撑构件联接到背板的中心部分并且垂直地远离背板的背面延伸。

    GAS MIXING APPARATUS
    3.
    发明申请
    GAS MIXING APPARATUS 审中-公开
    气体混合装置

    公开(公告)号:US20140014270A1

    公开(公告)日:2014-01-16

    申请号:US13918033

    申请日:2013-06-14

    Abstract: Embodiments of gas mixing apparatus are provided herein. In some embodiments, a gas mixing apparatus may include a container defining an interior volume, the container having a closed top and bottom and a sidewall having a circular cross section with respect to a central axis of the container passing through the top and bottom; a plurality of first inlets coupled to the container proximate the top of the container to provide a plurality of process gases to the interior volume of the container, the plurality of first inlets disposed such that a flow path of the plurality of process gases through the plurality of first inlets is substantially tangential to the sidewall of the container; and an outlet coupled to the container proximate the bottom of the container to allow the plurality of process gases to be removed from the interior volume of the container.

    Abstract translation: 气体混合装置的实施例在此提供。 在一些实施例中,气体混合设备可以包括限定内部容积的容器,所述容器具有封闭的顶部和底部,并且具有相对于穿过顶部和底部的容器的中心轴线具有圆形横截面的侧壁; 多个第一入口,其在容器的顶部附近耦合到容器以向容器的内部空间提供多个处理气体,多个第一入口被设置成使得多个处理气体的流动通过多个 第一入口基本上与容器的侧壁相切; 以及与容器的靠近容器底部相连的出口,以允许多个处理气体从容器的内部容积中移出。

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