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    SUBSTRATE SUPPORT WITH MORE UNIFORM EDGE PURGE
    2.
    发明申请
    SUBSTRATE SUPPORT WITH MORE UNIFORM EDGE PURGE 审中-公开
    基板支持更均匀边缘

    公开(公告)号：US20160002778A1

    公开(公告)日：2016-01-07

    申请号：US14476238

    申请日：2014-09-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： JALLEPALLY RAVI ,  TOMOHARU MATSUSHITA ,  ARAVIND MIYAR KAMATH ,  XIAOXIONG YUAN ,  CHENG-HSIUNG MATTHEW TSAI ,  MANJUNATHA KOPPA

    IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46

    CPC classification number: C23C16/455 ,  C23C16/4586

    Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first plate for supporting a substrate, the first plate having a plurality of purge gas channels on its backside; a second plate disposed beneath and supporting the first plate; and an edge ring surrounding the first plate and disposed above the second plate, wherein the plurality of purge gas channels extend from a single inlet in a central portion to a plurality of outlets at a periphery of the first plate, and wherein the plurality of purge gas channels have a substantially equal flow conductance.

    Abstract translation: 本文提供了基板支撑件的实施例。 在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一板，第一板在其背面具有多个吹扫气体通道; 设置在第一板下方并支撑第一板的第二板; 以及围绕所述第一板并设置在所述第二板上方的边缘环，其中所述多个吹扫气体通道从所述第一板的周边处的中心部分中的单个入口延伸到多个出口，并且其中所述多个吹扫 气体通道具有基本相等的流动电导。

    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER
    3.
    发明申请
    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER 审中-公开
    用于改善衬底加工室中气体流动的方法和装置

    公开(公告)号：US20150345019A1

    公开(公告)日：2015-12-03

    申请号：US14291807

    申请日：2014-05-30

    Applicant: Applied Materials, Inc.

    Inventor： XIAOXIONG YUAN ,  KARTIK SHAH ,  DHRITIMAN SUBHA KASHYAP ,  UMESH M. KELKAR ,  DIEN-YEH WU ,  MUHAMMAD M. RASHEED

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/08

    CPC classification number: C23C16/45544 ,  C23C16/08 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/458

    Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

    Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中，衬底处理室包括：室主体和限定内部容积的室盖; 衬底支撑件，其设置在所述内部容积内并具有支撑表面以支撑衬底; 气体通道，设置在与基板支撑件相对的盖中，以将气体混合物供应到内部空间，气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

    SUBSTRATE SUPPORT PLATE WITH IMPROVED LIFT PIN SEALING
    4.
    发明申请
    SUBSTRATE SUPPORT PLATE WITH IMPROVED LIFT PIN SEALING 审中-公开
    基板支撑板与改进的提升密封密封

    公开(公告)号：US20140265097A1

    公开(公告)日：2014-09-18

    申请号：US13798424

    申请日：2013-03-13

    Applicant: APPLIED MATERIALS, INC.

    Inventor： OLKAN CUVALCI ,  GWO-CHUAN TZU ,  XIAOXIONG YUAN

    IPC: B25B11/00

    CPC classification number: B25B11/00 ,  H01L21/68742

    Abstract: Embodiments of lift pin assemblies and substrate supports having such lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes a body with a first end including a flange and an opposing second end; a bore through the body from the first end to the second end; a profile on an outer surface proximate a second end; and a collar, wherein the profile is configured to removably lock the collar onto the second end.

    Abstract translation: 本文提供了具有这种提升销组件的提升销组件和衬底支撑件的实施例。 在一些实施例中，提升销组件包括主体，其具有包括凸缘的第一端和相对的第二端; 穿过主体从第一端到第二端的孔; 在靠近第二端的外表面上的轮廓; 和一个套环，其中所述轮廓被配置成将所述套环可拆卸地锁定到所述第二端上。

    HEATED SUBSTRATE SUPPORT WITH FLATNESS CONTROL
    5.
    发明申请
    HEATED SUBSTRATE SUPPORT WITH FLATNESS CONTROL 审中-公开
    加热底板支撑与平面控制

    公开(公告)号：US20140251214A1

    公开(公告)日：2014-09-11

    申请号：US13787385

    申请日：2013-03-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： OLKAN CUVALCI ,  GWO-CHUAN TZU ,  XIAOXIONG YUAN

    IPC: H01L21/683 ,  G01K3/10

    CPC classification number: G01K3/10 ,  H01L21/67103

    Abstract: Embodiments of heated substrate supports are provided herein, In some embodiments, a heated substrate support includes a support plate having a top surface and an opposite bottom surface; and a first heater disposed within the support plate, wherein the first heater is disposed beneath a mid-plane of the support plate, and wherein the first heater is disposed proximate a central zone of the support plate.

    Abstract translation: 在一些实施例中，加热的衬底支撑件包括具有顶表面和相对底表面的支撑板; 以及设置在所述支撑板内的第一加热器，其中所述第一加热器设置在所述支撑板的中间平面的下方，并且其中所述第一加热器设置在所述支撑板的中心区域附近。

    ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID
    8.
    发明申请
    ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 审中-公开
    原子层沉积室与热引线

    公开(公告)号：US20160097119A1

    公开(公告)日：2016-04-07

    申请号：US14507780

    申请日：2014-10-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANQING CUI ,  FARUK GUNGOR ,  DIEN-YEH WU ,  VIKAS JANGRA ,  MUHAMMAD M. RASHEED ,  WEI V. TANG ,  YIXIONG YANG ,  XIAOXIONG YUAN ,  KYOUNG-HO BU ,  SRINIVAS GANDIKOTA ,  YU CHANG ,  WILLIAM W. KUANG

    IPC: C23C16/44 ,  C23C16/46 ,  B08B7/00 ,  C23C16/455

    CPC classification number: C23C16/4405 ,  C23C16/452 ,  C23C16/45506 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862

    Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

    Abstract translation: 本文提供了用于清洁原子层沉积室的方法和装置。 在一些实施例中，腔室盖组件包括：壳体，其包围沿着中心轴线延伸并具有上部和下部的中心通道; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 第一加热元件，用于加热中心通道; 第二加热元件，用于加热盖板的底面; 流体耦合到中央通道的远程等离子体源; 以及耦合在所述远程等离子体源和所述壳体之间的隔离套环，其中所述隔离套环具有延伸穿过所述隔离套环的内部通道，以流体地耦合所述远程等离子体源和所述中央通道。

    SUBSTRATE SUPPORT WITH MULTI-PIECE SEALING SURFACE
    9.
    发明申请
    SUBSTRATE SUPPORT WITH MULTI-PIECE SEALING SURFACE 有权
    基板支撑与多层密封表面

    公开(公告)号：US20140251207A1

    公开(公告)日：2014-09-11

    申请号：US13787402

    申请日：2013-03-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： OLKAN CUVALCI ,  GWO-CHUAN TZU ,  XIAOXIONG YUAN

    IPC: H01L21/683

    CPC classification number: H01L21/67126 ,  H01L21/68785

    Abstract: Embodiments of substrate supports and sealing rings for use in a substrate support are provided herein. In some embodiments, a substrate support structure includes an arcuate sealing piece having a first side including a generally planar support surface; a first arcuate portion; a second arcuate portion disposed radially inward of the first arcuate portion; a first end portion comprising a first arcuate extension extending from the first arcuate portion; and a second end portion comprising a second arcuate extension extending from the second arcuate portion.

    Abstract translation: 本文提供了用于衬底支撑件的衬底支撑件和密封环的实施例。 在一些实施例中，衬底支撑结构包括弓形密封件，其具有包括大致平坦的支撑表面的第一侧面; 第一弧形部分; 设置在所述第一弧形部分的径向内侧的第二弧形部分; 第一端部包括从所述第一弓形部分延伸的第一弧形延伸部; 以及包括从所述第二弧形部分延伸的第二弧形延伸部的第二端部。

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