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    PARTICLE REDUCTION VIA THROTTLE GATE VALVE PURGE
    3.
    发明申请
    PARTICLE REDUCTION VIA THROTTLE GATE VALVE PURGE 有权
    颗粒减少通过节流门阀

    公开(公告)号：US20140366953A1

    公开(公告)日：2014-12-18

    申请号：US14276289

    申请日：2014-05-13

    Applicant: APPLIED MATERIALS, INC.

    Inventor： JARED AHMAD LEE ,  DMITRY LUBOMIRSKY ,  MARTIN JEFF SALINAS ,  ANDREW NGUYEN ,  TOM K. CHO ,  ERIC A. ENGLHARDT ,  FERNANDO SILVEIRA

    IPC: F16K3/02 ,  B08B9/032

    CPC classification number: B08B9/0325 ,  F16K3/02 ,  F16K51/02 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0419 ,  Y10T137/4259

    Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

    Abstract translation: 本文提供了在基板处理室中使用的节流闸阀中减小颗粒的方法和装置。 在一些实施例中，用于处理室的闸阀包括具有从主体的第一表面到相对的第二表面穿过的开口的主体; 从开口的侧壁延伸到主体中的口袋; 可移动地设置在所述口袋内的封闭位置，所述关闭位置密封所述开口和露出所述开口的打开位置，并完全将所述门置于所述口袋内; 以及设置在所述闸阀中的多个气体端口，其构造成将气流引导到与所述开口流体连接的所述闸阀的一部分。

    HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL
    5.
    发明申请
    HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL 审中-公开
    高效率三线圈电感耦合等离子体源相控

    公开(公告)号：US20130105086A1

    公开(公告)日：2013-05-02

    申请号：US13657232

    申请日：2012-10-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SAMER BANNA ,  WAHEB BISHARA ,  RYAN GIAR ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  KYLE R. TANTIWONG

    IPC: H05H1/46 ,  B44C1/22 ,  H05H1/10

    CPC classification number: H05H1/46 ,  H05H2001/4667

    Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

    Abstract translation: 等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈 ，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽被配置为局部引导 由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位 线圈

    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL
    6.
    发明申请
    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL 审中-公开
    具有室壁温度控制的等离子体反应器

    公开(公告)号：US20130105085A1

    公开(公告)日：2013-05-02

    申请号：US13647574

    申请日：2012-10-09

    Applicant: Applied Materials, Inc.

    Inventor： IMAD YOUSIF ,  MARTIN JEFFREY SALINAS ,  SAMER BANNA ,  ANDREW NGUYEN ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  ANKUR AGARWAL ,  KALLOL BERA

    IPC: H01L21/20 ,  H01L21/306

    CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

    PLASMA PROCESSING SYSTEM WITH DIRECT OUTLET TOROIDAL PLASMA SOURCE
    7.
    发明申请
    PLASMA PROCESSING SYSTEM WITH DIRECT OUTLET TOROIDAL PLASMA SOURCE 审中-公开
    具有直接出口等离子体等离子体源的等离子体处理系统

    公开(公告)号：US20160163513A1

    公开(公告)日：2016-06-09

    申请号：US14565077

    申请日：2014-12-09

    Applicant: Applied Materials, Inc.

    Inventor： DMITRY LUBOMIRSKY

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458

    Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.

    Abstract translation: 等离子体处理系统包括在等离子体腔中产生等离子体的处理室和等离子体源。 等离子体腔体基本上是围绕环形轴线对称的。 等离子体源在等离子体腔的等离子体产品的第一轴向侧上限定多个出口孔，等离子体产物通过等离子体通过从等离子体空腔朝向处理室的轴向方向通过多个出口孔产生。 等离子体处理的方法包括在基本上环形的等离子体腔内产生等离子体，所述等离子体腔限定环形轴线，以形成等离子体产物，并且通过多个出口开口将等离子体产物分布到处理室，所述多个出口开口基本上以方位角分布在第一轴向侧 等离子体腔，直接进入处理室。

    DIRECT OUTLET TOROIDAL PLASMA SOURCE
    8.
    发明申请
    DIRECT OUTLET TOROIDAL PLASMA SOURCE 审中-公开
    直接出口等离子体等离子体源

    公开(公告)号：US20160163512A1

    公开(公告)日：2016-06-09

    申请号：US14565046

    申请日：2014-12-09

    Applicant: Applied Materials, Inc.

    Inventor： DMITRY LUBOMIRSKY

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: An apparatus for supplying plasma products includes a plasma generation block that defines a toroidal plasma cavity therein. The plasma cavity is substantially symmetric about a toroidal axis, and the toroidal axis defines a first and second axial side of the plasma generation block. A magnetic element at least partially surrounds the plasma generation block at one azimuthal location with respect to the toroidal axis, such that a magnetic flux within the magnetic element induces a corresponding electric field into the plasma cavity to generate a plasma from one or more source gases, the plasma forming plasma products. The plasma generation block supplies the plasma products through a plurality of output apertures defined by the plasma generation block on the first axial side.

    Abstract translation: 用于提供等离子体产品的装置包括在其中限定环形等离子体腔的等离子体产生块。 等离子体空腔基本上是围绕环形轴对称，并且环形轴线限定了等离子体产生块的第一和第二轴向侧。 磁性元件至少部分地围绕相对于环形轴线的一个方位位置处的等离子体产生块，使得磁性元件内的磁通量将相应的电场引入到等离子体空腔中以从一个或多个源气体产生等离子体 ，等离子体形成等离子体产品。 等离子体产生块通过由第一轴向侧上的等离子体产生块限定的多个输出孔提供等离子体产物。

    ELECTROSTATIC CHUCK
    9.
    发明申请
    ELECTROSTATIC CHUCK 审中-公开
    静电卡

    公开(公告)号：US20130107415A1

    公开(公告)日：2013-05-02

    申请号：US13646330

    申请日：2012-10-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SAMER BANNA ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY

    IPC: H02N13/00

    CPC classification number: H01L21/6831 ,  H01J37/32715 ,  H02N13/00

    Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and retaining a substrate having a given width may include a dielectric member having a support surface configured to support a substrate having a given width; an electrode disposed within the dielectric member beneath the support surface and extending from a center of the dielectric member outward to an area beyond an outer periphery of the substrate as defined by the given width of the substrate; an RF power source coupled to the electrode; and a DC power source coupled to the electrode.

    Abstract translation: 本文提供了静电卡盘的实施例。 在一些实施例中，用于支撑和保持具有给定宽度的基底的静电卡盘可以包括电介质构件，其具有被配置为支撑具有给定宽度的基底的支撑表面; 电介质构件，其设置在所述电介质构件的所述支撑表面下方并且从所述电介质构件的中心向外延伸到由所述衬底的给定宽度限定的超过所述衬底的外周的区域; 耦合到所述电极的RF电源; 以及耦合到所述电极的直流电源。

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