公开(公告)号：US20130105085A1

公开(公告)日：2013-05-02

申请号：US13647574

申请日：2012-10-09

Applicant: Applied Materials, Inc.

Inventor： IMAD YOUSIF ,  MARTIN JEFFREY SALINAS ,  SAMER BANNA ,  ANDREW NGUYEN ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  ANKUR AGARWAL ,  KALLOL BERA

IPC: H01L21/20 ,  H01L21/306

CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

公开(公告)号：US20190221463A1

公开(公告)日：2019-07-18

申请号：US16360187

申请日：2019-03-21

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H01J37/32 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

公开(公告)号：US20130155568A1

公开(公告)日：2013-06-20

申请号：US13651351

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在所述第一电极的所述第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

公开(公告)号：US20140262044A1

公开(公告)日：2014-09-18

申请号：US14196360

申请日：2014-03-04

Applicant: APPLIED MATERIALS, INC.

Inventor： IMAD YOUSIF ,  SAMER BANNA ,  WAHEB BISHARA ,  ALVARO GARCIA DE GORORDO

IPC: H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/32192 ,  H01J37/32651

Abstract: Embodiments of the present invention generally relate to an apparatus for processing substrates having improved magnetic shielding. One embodiment of the present invention provides a plasma processing chamber having an RF match, a plasma source and a plasma region defined between a chamber ceiling and a substrate support. At least one of the RF match, plasma source and plasma region is shielded from any external magnetic field with a shielding material that has a relative magnetic permeability ranging from about 20,000 to about 200,000. As a result, the inherent process non-uniformities of the hardware may be reduced effectively without the overlaid non-uniformities from external factors such as earth's geomagnetic field.

Abstract translation: 本发明的实施例一般涉及用于处理具有改进的磁屏蔽的基板的设备。 本发明的一个实施例提供了一种具有RF匹配，等离子体源和限定在室顶板和衬底支架之间的等离子体区域的等离子体处理室。 RF匹配，等离子体源和等离子体区域中的至少一个屏蔽具有相对导磁率为约20,000至约200,000的屏蔽材料的任何外部磁场。 结果，可以有效地降低硬件的固有过程不均匀性，而不会受到诸如地球地磁场等外部因素的重叠的不均匀性的影响。

公开(公告)号：US20130284287A1

公开(公告)日：2013-10-31

申请号：US13871671

申请日：2013-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： PAUL BENJAMIN REUTER ,  MARTIN JEFFREY SALINAS ,  JARED AHMAD LEE ,  IMAD YOUSIF

IPC: F16L3/00

CPC classification number: F16L3/00 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/68785 ,  Y10T137/6966

Abstract: Substrate supports for use in process chambers having limited physical space for configuring chamber components are disclosed. In some embodiments, a substrate support may include a body having a support surface; a utilities feed coupled to the body and comprising a second portion coupled to and extending laterally away from the body beyond a diameter of the body, and first portion coupled to the second portion and extending perpendicularly away from the body; and a cover plate movably disposable beneath and with respect to the body between a first position disposed completely beneath the body, and a second position wherein the cover plate is disposed over the first portion of the utilities feed and includes a first portion disposed beneath the body, and wherein the first portion has a curved edge having a radius equal to the distance from a central axis of the support surface to the curved edge.

Abstract translation: 公开了用于配置室部件的具有有限物理空间的处理室中的基板支撑。 在一些实施例中，衬底支撑件可以包括具有支撑表面的主体; 耦合到所述主体并且包括耦合到所述主体并且远离所述主体的所述主体的第二部分超过所述主体的直径的第二部分，以及联接到所述第二部分并且垂直地远离所述主体延伸的第一部分; 以及盖板，其可移动地一次性地在主体之下并相对于主体移动，在完全位于主体下方的第一位置和第二位置之间，其中盖板设置在公用设施进料的第一部分之上，并且包括设置在主体下方的第一部分 ，并且其中所述第一部分具有弯曲边缘，其具有等于从所述支撑表面的中心轴线到所述弯曲边缘的距离的半径。

公开(公告)号：US20130154175A1

公开(公告)日：2013-06-20

申请号：US13651354

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/68

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

Abstract translation: 本文提供了与处理室的基板支撑件一起使用的工艺套件组件。 在一些实施例中，处理套件环可以包括具有外边缘，内边缘，顶表面和底部的环形主体，其中外边缘具有约12.473英寸至约12.479英寸的直径，并且内边缘具有 约11.726英寸至约11.728英寸的直径，并且其中所述环形体具有约0.116至约0.118英寸的高度; 以及设置在所述环形体的上表面上的多个突起，所述多个突起中的每一个围绕所述环形体对称设置。