公开(公告)号：US20140110248A1

公开(公告)日：2014-04-24

申请号：US14036057

申请日：2013-09-25

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Thanh X. NGUYEN ,  Muhammad M. RASHEED ,  Xianmin TANG

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/0036 ,  C23C14/35

Abstract: According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.

Abstract translation: 根据实施例提供使用物理气相沉积室形成介电膜的方法。 特别地，可以执行粘贴工艺以在物理气相沉积室的内表面上施加导电涂层。 糊化过程可以在调整的工艺参数下进行，例如间隔增加和/或增加的室压力。 经调整的参数可以更有效和更有效地形成导电涂层。

公开(公告)号：US20210343557A1

公开(公告)日：2021-11-04

申请号：US17227453

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Muhammad M. RASHEED ,  Ilker DURUKAN

IPC: H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.

公开(公告)号：US20220162752A1

公开(公告)日：2022-05-26

申请号：US17100249

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Ilker DURUKAN ,  Muhammad M. RASHEED ,  Kenric CHOI ,  Tatsuya SATO

IPC: C23C16/455

Abstract: Methods and apparatus to reduce pressure fluctuations in a chemical delivery system for a process chamber are provided herein. In some embodiments, a chemical delivery system for a process chamber, includes: a carrier gas supply; an ampoule fluidly coupled to the carrier gas supply via a first supply line, wherein the ampoule is configured to supply one or more process gases to the process chamber via a second supply line; an inlet valve disposed in line with the first supply line to control a flow of a carrier gas from the carrier gas supply to the ampoule; and a first control valve disposed in line with a pressure regulation line, wherein the pressure regulation line is fluidly coupled to the first supply line at a tee location between the carrier gas supply and the inlet valve.

公开(公告)号：US20210246552A1

公开(公告)日：2021-08-12

申请号：US17242898

申请日：2021-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Srinivas GANDIKOTA ,  Mario Dan SANCHEZ ,  Guoqiang JIAN ,  Yixiong YANG ,  Deepak JADHAV ,  Ashutosh AGARWAL

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.

公开(公告)号：US20190032210A1

公开(公告)日：2019-01-31

申请号：US15661441

申请日：2017-07-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhannad MUSTAFA ,  Muhammad M. RASHEED ,  Mario Dan SANCHEZ ,  Yu CHANG ,  William Kuang ,  Vinod Konda PURATHE ,  Manjunatha KOPPA

IPC: C23C16/455 ,  G01K7/16 ,  C23C16/458

Abstract: Embodiments of the present disclosure are directed to a quick disconnect resistance temperature detector (RTD) heater assembly, that includes a first assembly comprising a pedestal, a pedestal shaft, an adapter, one or more heater power supply terminals, and at least one RTD, and a second assembly comprising a rotating module having a central opening, and a cable assembly partially disposed in the central opening and securely fastened to the rotating module, wherein the first assembly is removably coupled to the second assembly, wherein the cable assembly includes one or more power supply sockets that receive the heater power supply terminals when the first and second assemblies are coupled together, and wherein the cable assembly includes one or more spring loaded RTD pins that contact the at least one RTD disposed in the first assembly when the first and second assemblies are coupled together.

公开(公告)号：US20230125613A1

公开(公告)日：2023-04-27

申请号：US18084659

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Muhammad M. RASHEED ,  Ilker DURUKAN

IPC: H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness on a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.

公开(公告)号：US20180155838A1

公开(公告)日：2018-06-07

申请号：US15421964

申请日：2017-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Muhannad MUSTAFA ,  Hamid TAVASSOLI ,  Steven V. SANSONI ,  Cheng-Hsiung TSAI ,  Vikash Banthia

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683

CPC classification number: C23C16/46 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC: C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20220064785A1

公开(公告)日：2022-03-03

申请号：US17010518

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad MUSTAFA ,  Haoyan SHA ,  Muhammad M. RASHEED ,  Chi-Chou LIN ,  Mario D. SILVETTI ,  Bin CAO ,  Shihchung CHEN ,  Yongjing LIN

IPC: C23C16/44

Abstract: Embodiments of the present disclosure generally relate chamber lids and methods of using such for gas-phase particle reduction. In an embodiment is provided a chamber lid that includes a top wall, a bottom wall, a plurality of vertical sidewalls, and an interior volume within the chamber lid defined by the top wall, the bottom wall, and the plurality of vertical sidewalls. The chamber lid further includes a plurality of air flow apertures, wherein the plurality of air flow apertures is configured to fluidly communicate air into the interior volume and out of the interior volume, and a mesh disposed on a face of at least one of the air flow apertures of the plurality of air flow apertures. In another embodiment is provided a method of processing a substrate in a substrate processing chamber, the substrate processing chamber comprising a chamber lid as described herein.

公开(公告)号：US20210404059A1

公开(公告)日：2021-12-30

申请号：US17003622

申请日：2020-08-26

Applicant: Applied Materials, Inc.

Inventor： Muhammad M. RASHEED ,  Anqing CUI

IPC: C23C16/455 ,  C23C16/52

Abstract: Embodiments provided herein generally relate to a processing system and a method of controlling conductance in a processing system. The processing system and method disclosed herein allow for control of gas ratios within the processing system, while still maintaining a high level of conductance. The processing system includes a purge gas valve configured to pulse a flow of foreline purge gas. The method includes pulsing the foreline purge gas. The method is contained in a computer readable medium. The pulsed foreline purge gas can maintain a ratio of process purge gas and the process gas in the processing region.