公开(公告)号：US10923320B2

公开(公告)日：2021-02-16

申请号：US16521094

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Travis Koh ,  Philip Allan Kraus ,  Leonid Dorf ,  Prabu Gopalraja

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

公开(公告)号：US09190320B2

公开(公告)日：2015-11-17

申请号：US13748910

申请日：2013-01-24

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/67 ,  H01L23/482 ,  H01L29/772 ,  H01L21/285

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

Abstract translation: 描述了用于形成薄膜的装置和方法包括铟和砷。 特别地，这些膜可以在“负载锁定”条件下形成为两个或更多个室的构造。 这些膜可以包括作为掺杂剂的附加组分，例如铝和/或镓。 这种膜可以用于具有低接触电阻的金属/硅触点。 还公开了包括包含砷化铟的膜的装置。

公开(公告)号：US10373804B2

公开(公告)日：2019-08-06

申请号：US15424405

申请日：2017-02-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Travis Koh ,  Philip Allan Kraus ,  Leonid Dorf ,  Prabu Gopalraja

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

公开(公告)号：US09441298B2

公开(公告)日：2016-09-13

申请号：US14939202

申请日：2015-11-12

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: H01L21/44 ,  C23C16/52 ,  H01L21/768 ,  H01L21/67 ,  H01L23/482 ,  H01L29/772 ,  H01L21/285 ,  C23C14/22 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

公开(公告)号：US20160068962A1

公开(公告)日：2016-03-10

申请号：US14939202

申请日：2015-11-12

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: C23C16/52 ,  C23C16/455 ,  C23C14/22 ,  C23C16/02

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

Abstract translation: 描述了用于形成薄膜的装置和方法包括铟和砷。 特别地，这些膜可以在“负载锁定”条件下形成为两个或更多个室的构造。 这些膜可以包括作为掺杂剂的附加组分，例如铝和/或镓。 这种膜可以用于具有低接触电阻的金属/硅触点。 还公开了包括包含砷化铟的膜的装置。