公开(公告)号：US09064816B2

公开(公告)日：2015-06-23

申请号：US13839948

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: B44C1/22 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

公开(公告)号：US20150262829A1

公开(公告)日：2015-09-17

申请号：US14215701

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。

公开(公告)号：US09299575B2

公开(公告)日：2016-03-29

申请号：US14215701

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。

公开(公告)号：US09202708B1

公开(公告)日：2015-12-01

申请号：US14523647

申请日：2014-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Sang-jin Kim ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove two separate regions of silicon oxide at distinct etch rates. The methods may be used to remove doped silicon oxide faster than undoped silicon oxide or more lightly-doped silicon oxide. The relative humidity in the substrate processing region may be low during the etch process to increase the etch selectivity of the doped silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。 远程等离子体与含氧前体组合起来激发含氟前体。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽或醇组合。 该组合与图案化的异质结构反应以以不同的蚀刻速率去除两个分离的氧化硅区域。 该方法可以用于比未掺杂的氧化硅或更多的轻掺杂的氧化硅更快地除去掺杂的氧化硅。 在蚀刻工艺期间，衬底处理区域中的相对湿度可能较低，以增加掺杂氧化硅的蚀刻选择性。

公开(公告)号：US20150311089A1

公开(公告)日：2015-10-29

申请号：US14746655

申请日：2015-06-22

Applicant: Applied Materials, Inc.

Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

公开(公告)号：US20140199850A1

公开(公告)日：2014-07-17

申请号：US13839948

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。