公开(公告)号：US20040222082A1

公开(公告)日：2004-11-11

申请号：US10429941

申请日：2003-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Praburam Gopalraja ,  Xianmin Tang ,  Jianming Fu ,  Mark A. Perrin ,  Jean Yue (Phillip) Wang ,  Arvind Sundarrajan ,  Hong Zhang ,  Jick Yu ,  Umesh Kelkar ,  Zheng Xu ,  Fusen Chen

IPC: C23C014/32 ,  G21G005/00

CPC classification number: H01J37/34 ,  C23C14/046 ,  C23C14/3442 ,  C23C14/5833 ,  H01J37/3053 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

Abstract: In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35null to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

Abstract translation: 结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。 铣削可以在溅射沉积室中同时进行沉积，或在其之后或之后在单独的研磨反应器中进行。 围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。 围绕腔室轴线的环形离子源允许等离子体电流回路。 阳极层离子源和由铜组成的源是有利的。

公开(公告)号：US20040094402A1

公开(公告)日：2004-05-20

申请号：US10632882

申请日：2003-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

IPC: C23C014/35

CPC classification number: C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract translation: 例如，用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体（SIP）溅射和电容耦合等离子体（CCP）溅射的方法，其一起或交替地被促进 ，在同一个房间。 此外，可以通过电感耦合等离子体（ICP）再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强，其作用是限制CCP等离子体并增加其密度。