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    Oblique ion milling of via metallization
    2.
    发明申请
    Oblique ion milling of via metallization 审中-公开
    通孔金属化的倾斜离子铣削

    公开(公告)号：US20040222082A1

    公开(公告)日：2004-11-11

    申请号：US10429941

    申请日：2003-05-05

    申请人： APPLIED MATERIALS, INC.

    发明人： Praburam Gopalraja ,  Xianmin Tang ,  Jianming Fu ,  Mark A. Perrin ,  Jean Yue (Phillip) Wang ,  Arvind Sundarrajan ,  Hong Zhang ,  Jick Yu ,  Umesh Kelkar ,  Zheng Xu ,  Fusen Chen

    IPC分类号： C23C014/32 ,  G21G005/00

    CPC分类号： H01J37/34 ,  C23C14/046 ,  C23C14/3442 ,  C23C14/5833 ,  H01J37/3053 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

    摘要： In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35null to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

    摘要翻译： 结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。 铣削可以在溅射沉积室中同时进行沉积，或在其之后或之后在单独的研磨反应器中进行。 围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。 围绕腔室轴线的环形离子源允许等离子体电流回路。 阳极层离子源和由铜组成的源是有利的。

    Method of obtaining low temperature alpha-ta thin films using wafer bias
    3.
    发明申请
    Method of obtaining low temperature alpha-ta thin films using wafer bias 审中-公开
    使用晶片偏置获得低温α-ta薄膜的方法

    公开(公告)号：US20020142589A1

    公开(公告)日：2002-10-03

    申请号：US09775356

    申请日：2001-01-31

    申请人： Applied Materials, Inc.

    发明人： Arvind Sundarrajan ,  Suraj Rengarajan ,  Michael A. Miller ,  Peijun Ding ,  Gongda Yao ,  Christophe Marcadal ,  Ling Chen

    IPC分类号： H01L021/44

    CPC分类号： H01L21/76846 ,  C23C14/024 ,  C23C14/16 ,  C23C16/34 ,  H01L21/2855 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided herein is a method of depositing alpha-tantalum film on a semiconductor wafer by depositing a tantalum nitride film on a wafer; and then depositing a tantalum film over the tantalum nitride film using wafer bias. The tantalum film as deposited is in alpha phase. Also provided is a method of depositing Cu barrier and seed layer on a semiconductor wafer, comprising the steps of depositing a tantalum nitride layer on a wafer; depositing a tantalum layer over the tantalum nitride layer using wafer bias, wherein the resulting tantalum barrier layer is in alpha phase; and then depositing Cu seed layer over the alpha-tantalum barrier layer. Further provided is a method of depositing alpha-tantalum film/layer using two-chamber process, wherein the tantalum nitride and subsequently deposited tantalum films/layers can be deposited in two separate chambers, such as IMP or SIP chambers. Still further provided is a method of depositing alpha-tantalum film by depositing PVD tantalum film on CVD films.

    摘要翻译： 本文提供了一种通过在晶片上沉积氮化钽膜在半导体晶片上沉积α-钽膜的方法; 然后使用晶片偏压在钽氮化物膜上沉积钽膜。 沉积的钽膜是α相。 还提供了一种在半导体晶片上沉积Cu势垒和种子层的方法，包括以下步骤：在晶片上沉积氮化钽层; 使用晶片偏置在钽氮化物层上沉积钽层，其中所得的钽阻挡层是α相; 然后在α-钽阻挡层上沉积Cu籽晶层。 进一步提供了一种使用二室工艺沉积α-钽膜/层的方法，其中氮化钽和随后沉积的钽膜/层可以沉积在两个分离的室中，例如IMP或SIP室。 还提供了通过在CVD膜上沉积PVD钽膜来沉积α-钽膜的方法。