公开(公告)号：US20040196127A1

公开(公告)日：2004-10-07

申请号：US10407893

申请日：2003-04-04

申请人： Applied Materials, Inc.

发明人： Mark A. Perrin

IPC分类号： H01F005/00

CPC分类号： H01J37/3455 ,  H01F7/0226 ,  H01J37/3405

摘要： A magnet assembly for producing a varying magnetic field is provided wherein a plurality of permanent magnets are interposed between two members which are constructed of a ferromagnetic material. Each of the magnets is rotatable and has a north and south magnetic pole. Each of the magnets is disposed so that the north magnetic poles of the plurality of permanent magnets have a common magnetic orientation with respect to the first member. An orienter, such as, for example, a ring gear and pinion arrangement, is coupled to the magnets to change their common magnetic orientation with respect to the first member. The magnetic field projected by the assembly varies as a function of the orientation of the magnets.

摘要翻译： 提供了一种用于产生变化的磁场的磁体组件，其中多个永磁体插在由铁磁材料构成的两个构件之间。 每个磁体是可旋转的，并且具有北和南磁极。 每个磁体被布置成使得多个永磁体的北磁极相对于第一构件具有共同的磁方向。 诸如例如环形齿轮和小齿轮装置的取向器联接到磁体以改变它们相对于第一构件的共同的磁方位。 由组件投射的磁场随着磁体的取向而变化。

公开(公告)号：US20040222082A1

公开(公告)日：2004-11-11

申请号：US10429941

申请日：2003-05-05

申请人： APPLIED MATERIALS, INC.

发明人： Praburam Gopalraja ,  Xianmin Tang ,  Jianming Fu ,  Mark A. Perrin ,  Jean Yue (Phillip) Wang ,  Arvind Sundarrajan ,  Hong Zhang ,  Jick Yu ,  Umesh Kelkar ,  Zheng Xu ,  Fusen Chen

IPC分类号： C23C014/32 ,  G21G005/00

CPC分类号： H01J37/34 ,  C23C14/046 ,  C23C14/3442 ,  C23C14/5833 ,  H01J37/3053 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

摘要： In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35null to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

摘要翻译： 结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。 铣削可以在溅射沉积室中同时进行沉积，或在其之后或之后在单独的研磨反应器中进行。 围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。 围绕腔室轴线的环形离子源允许等离子体电流回路。 阳极层离子源和由铜组成的源是有利的。

公开(公告)号：US20040026233A1

公开(公告)日：2004-02-12

申请号：US10215968

申请日：2002-08-08

申请人： Applied Materials, Inc.

发明人： Mark A. Perrin

IPC分类号： C23C014/32

CPC分类号： H01J37/3405 ,  H01J2237/0264

摘要： Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

摘要翻译： 提供了与半导体制造系统相关联的用于屏蔽磁通量的方法和装置。 磁屏蔽组件基本上围绕等离子体反应器的侧壁。 屏蔽组件包括与主动屏蔽构件组合的无源屏蔽构件。 结果，可以在等离子体反应器的等离子体区域中的磁场线图案的过度变形的情况下发生磁通的有效屏蔽。 在一个方面，屏蔽组件包括适于衰减磁通密度的第一屏蔽构件。 第一屏蔽构件与侧壁以平行，间隔的关系设置。 第二构件附接到第一屏蔽构件，并且由永久磁化的铁磁材料构成。

公开(公告)号：US20030150721A1

公开(公告)日：2003-08-14

申请号：US10074855

申请日：2002-02-11

申请人： Applied Materials, Inc.

发明人： Mark A. Perrin

IPC分类号： C23C014/32

CPC分类号： C23C14/345 ,  C23C14/3407 ,  C23C14/3457 ,  C23C14/35 ,  H01J37/3405

摘要： A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.

摘要翻译： 在一个实施例中，溅射沉积材料的源具有环形等离子体产生区域，其中等离子体操作以溅射环形阴极的内表面。 在一个实施例中，溅射沉积材料通过设置在阴极本身中的孔而通过源的外部。 在环形等离子体中产生的环形磁场有利于等离子体的产生，阴极的溅射以及通过等离子体的溅射材料的电离。