公开(公告)号：US20140273516A1

公开(公告)日：2014-09-18

申请号：US14173538

申请日：2014-02-05

Applicant: Applied Materials, Inc.

Inventor： Li-Qun XIA ,  Weifeng YE ,  Xiaojun ZHANG ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Victor NGUYEN ,  Derek R. WITTY

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

Abstract: Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在一个实施例中，该方法包括提供其上沉积有低k电介质膜的基底，并将低k电介质膜的表面暴露于含活性炭的前体气体，以在该表面上形成共形含碳膜 低k电介质膜，其中含碳前体气体在分子结构中具有至少一个或多个Si-N-Si键。

公开(公告)号：US20160013049A1

公开(公告)日：2016-01-14

申请号：US14770641

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Weifeng YE ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Xiaojun ZHANG ,  Xiaolan BA ,  Yu JIN ,  Li-Qun XIA

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/76825 ,  H01L21/76834

Abstract: Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

Abstract translation: 本发明的实施方案一般涉及形成电介质阻挡层的方法。 电介质阻挡层通过等离子体增强沉积工艺沉积在衬底上。 在一个实施例中，将气体混合物引入处理室。 气体混合物包括含硅气体，含氮气体，含硼气体和氩气（Ar）。