公开(公告)号：US20160013049A1

公开(公告)日：2016-01-14

申请号：US14770641

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Weifeng YE ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Xiaojun ZHANG ,  Xiaolan BA ,  Yu JIN ,  Li-Qun XIA

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/76825 ,  H01L21/76834

Abstract: Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

Abstract translation: 本发明的实施方案一般涉及形成电介质阻挡层的方法。 电介质阻挡层通过等离子体增强沉积工艺沉积在衬底上。 在一个实施例中，将气体混合物引入处理室。 气体混合物包括含硅气体，含氮气体，含硼气体和氩气（Ar）。

公开(公告)号：US20140349480A1

公开(公告)日：2014-11-27

申请号：US14285535

申请日：2014-05-22

Applicant: Applied Materials, Inc.

Inventor： Mei-yee SHEK ,  Weifeng YE ,  Li-Qun XIA ,  Kang Sub YIM ,  Kelvin CHAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US20170162511A1

公开(公告)日：2017-06-08

申请号：US15439145

申请日：2017-02-22

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Mehul B. NAIK ,  Yong CAO ,  Mei-yee SHEK

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53238 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber, wherein the substrate comprises a copper layer having an exposed surface and a low-k dielectric layer having an exposed surface, forming a metal layer over the exposed surface of the copper layer, wherein the exposed surface of the low-k dielectric layer is free from the metal layer, and forming a metal-based dielectric layer over the metal layer and over at least part of the exposed low-k dielectric surface, wherein the metal-based dielectric layer comprises an aluminum compound.

公开(公告)号：US20160071724A1

公开(公告)日：2016-03-10

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan BA ,  Weifeng YE ,  Mei-yee SHEK ,  Yu JIN ,  Li-Qun XIA ,  Deenesh PADHI ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  C23C16/44

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。

公开(公告)号：US20140273516A1

公开(公告)日：2014-09-18

申请号：US14173538

申请日：2014-02-05

Applicant: Applied Materials, Inc.

Inventor： Li-Qun XIA ,  Weifeng YE ,  Xiaojun ZHANG ,  Mei-yee SHEK ,  Mihaela BALSEANU ,  Victor NGUYEN ,  Derek R. WITTY

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

Abstract: Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在一个实施例中，该方法包括提供其上沉积有低k电介质膜的基底，并将低k电介质膜的表面暴露于含活性炭的前体气体，以在该表面上形成共形含碳膜 低k电介质膜，其中含碳前体气体在分子结构中具有至少一个或多个Si-N-Si键。