公开(公告)号：US20220037216A1

公开(公告)日：2022-02-03

申请号：US16944285

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi LIANTO ,  Sik Hin CHI ,  Shih-Chao HUNG ,  Pin Gian GAN ,  Ricardo Fujii VINLUAN ,  Gaurav MEHTA ,  Ramesh CHIDAMBARAM ,  Guan Huei SEE ,  Arvind SUNDARRAJAN ,  Upendra V. UMMETHALA ,  Wei Hao KEW ,  Muhammad Adli Danish Bin ABDULLAH ,  Michael Charles KUTNEY ,  Mark McTaggart WYLIE ,  Amulya Ligorio ATHAYDE ,  Glen T. MORI

IPC: H01L21/66 ,  H01L21/768 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/683

Abstract: Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

公开(公告)号：US20240249965A1

公开(公告)日：2024-07-25

申请号：US18099210

申请日：2023-01-19

Applicant: Applied Materials, Inc.

Inventor： Arvinder Manmohan Singh CHADHA ,  Jonathan SIMMONS ,  Stephen Donald PROUTY ,  Christopher BEAUDRY ,  Glen T. MORI ,  Anand DURAIRAJAN

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/68735 ,  H01L21/68757

Abstract: A substrate support carrier includes an electrostatic chuck (ESC) assembly includes a top ceramic disc having a recess formed from a lower surface of the top ceramic disc, a bottom ceramic disc having a hole through the bottom ceramic disc, an upper bonding layer interposed between the lower surface of the top ceramic disc and an upper surface of the bottom ceramic disc, and a porous plug within at least one of the recess of the top ceramic disc and the hole of the bottom ceramic disc, a temperature control base, and a lower bonding layer interposed between a lower surface of the bottom ceramic disc and an upper surface of the temperature control base.

公开(公告)号：US20210166953A1

公开(公告)日：2021-06-03

申请号：US16939652

申请日：2020-07-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Chien-Kang HSIUNG ,  Yuichi WADA ,  Glen T. MORI

IPC: H01L21/48 ,  H01L23/367

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

公开(公告)号：US20180240666A1

公开(公告)日：2018-08-23

申请号：US15959008

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02 ,  C23C16/511 ,  H01L21/3105 ,  C23C14/22 ,  H01L21/67 ,  C23C16/46

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US20170117146A1

公开(公告)日：2017-04-27

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02 ,  C23C16/511 ,  C23C14/22 ,  C23C16/46 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US20150076110A1

公开(公告)日：2015-03-19

申请号：US14028099

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Sang Ho YU ,  Kie Jin PARK ,  Glen T. MORI ,  Joshua COLLINS

IPC: C23F4/00 ,  H01J37/32

CPC classification number: C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

公开(公告)号：US20150056819A1

公开(公告)日：2015-02-26

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen WONG ,  Ke CHANG ,  Yueh Sheng OW ,  Ananthkrishna JUPUDI ,  Glen T. MORI ,  Aksel KITOWSKI ,  Arkajit Roy BARMAN

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。