Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage

    公开(公告)号:US11626267B2

    公开(公告)日:2023-04-11

    申请号:US17243478

    申请日:2021-04-28

    Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

    Objective lens arrangement
    3.
    发明授权

    公开(公告)号:US11264198B2

    公开(公告)日:2022-03-01

    申请号:US16160906

    申请日:2018-10-15

    Abstract: An objective lens arrangement that may include a magnetic lens and an electrostatic lens. The magnetic lens may include one or more coils, an upper polepiece and a lower polepiece. The electrostatic lens may include an upper electrode, an internal lower electrode and an external lower electrode. A majority of the internal lower electrode may be surrounded by a majority of the external lower electrode. The upper electrode, the internal lower electrode, and the external lower electrode are arranged in a coaxial relationship along an optical axis of the objective lens arrangement. An area of a bottom aperture of the external lower electrode may not exceed an area of a bottom aperture of the internal lower electrode.

    BACK-SCATTER ELECTRONS (BSE) IMAGING WITH A SEM IN TILTED MODE USING CAP BIAS VOLTAGE

    公开(公告)号:US20220351937A1

    公开(公告)日:2022-11-03

    申请号:US17243478

    申请日:2021-04-28

    Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

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