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公开(公告)号:US20210348296A1
公开(公告)日:2021-11-11
申请号:US16870290
申请日:2020-05-08
Applicant: APPLIED Materials, Inc.
Inventor: Paul R McHugh , Gregory J Wilson , Kyle M Hanson , John L Klocke , Paul Van Valkenburg , Eric J Bergman , Adam Marc McClure , Deepak Saagar Kalaikadal , Nolan Layne Zimmerman , Michael Windham , Mikael R Borjesson
Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.
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公开(公告)号:US11268208B2
公开(公告)日:2022-03-08
申请号:US16870290
申请日:2020-05-08
Applicant: APPLIED Materials, Inc.
Inventor: Paul R McHugh , Gregory J Wilson , Kyle M Hanson , John L Klocke , Paul Van Valkenburg , Eric J Bergman , Adam Marc McClure , Deepak Saagar Kalaikadal , Nolan Layne Zimmerman , Michael Windham , Mikael R Borjesson
Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.
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公开(公告)号:US12116686B2
公开(公告)日:2024-10-15
申请号:US17670310
申请日:2022-02-11
Applicant: Applied Materials, Inc.
Inventor: Eric J. Bergman , Adam Marc McClure , Paul R. McHugh , Gregory J. Wilson , John L Klocke
CPC classification number: C25D21/12 , C25D7/123 , C25D17/001 , G05B13/027
Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.
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