PARAMETER ADJUSTMENT MODEL FOR SEMICONDUCTOR PROCESSING CHAMBERS

    公开(公告)号:US20230257900A1

    公开(公告)日:2023-08-17

    申请号:US17670310

    申请日:2022-02-11

    CPC classification number: C25D21/12 C25D17/00 G05B13/027

    Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

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