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    Vertically adjustable plasma source
    1.
    发明授权
    Vertically adjustable plasma source 有权

    公开(公告)号：US12288677B2

    公开(公告)日：2025-04-29

    申请号：US18205690

    申请日：2023-06-05

    Applicant: Applied Materials, Inc.

    Inventor： Tsutomu Tanaka ,  Jared Ahmad Lee ,  Rakesh Ramadas ,  Dmitry A. Dzilno ,  Gregory J. Wilson ,  Sriharish Srinivasan

    IPC: H01J37/32

    Abstract: The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

    MECHANICALLY-DRIVEN OSCILLATING FLOW AGITATION
    4.
    发明申请
    MECHANICALLY-DRIVEN OSCILLATING FLOW AGITATION 有权

    公开(公告)号：US20220145485A1

    公开(公告)日：2022-05-12

    申请号：US17582659

    申请日：2022-01-24

    Applicant: Applied Materials, Inc.

    Inventor： Paul R. McHugh ,  Gregory J. Wilson

    IPC: C25D5/08 ,  C25D17/00 ,  C25D17/06 ,  C25D21/10 ,  C25D7/12

    Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

    SYSTEMS AND METHODS FOR IMPROVING WITHIN DIE CO-PLANARITY UNIFORMITY
    6.
    发明申请
    SYSTEMS AND METHODS FOR IMPROVING WITHIN DIE CO-PLANARITY UNIFORMITY 审中-公开

    公开(公告)号：US20200098628A1

    公开(公告)日：2020-03-26

    申请号：US16572920

    申请日：2019-09-17

    Applicant: Applied Materials, Inc.

    Inventor： Paul McHugh ,  Kwan Wook Roh ,  Gregory J. Wilson

    IPC: H01L21/768 ,  G06F17/50 ,  H01L21/288

    Abstract: Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.

    Electroplating processor with current thief electrode
    7.
    发明授权
    Electroplating processor with current thief electrode 有权

    公开(公告)号：US09765443B2

    公开(公告)日：2017-09-19

    申请号：US14843803

    申请日：2015-09-02

    Applicant: APPLIED Materials, Inc.

    Inventor： Gregory J. Wilson ,  Paul R. McHugh

    IPC: C25D17/00 ,  C25D17/12 ,  C25D7/12

    CPC classification number: C25D17/12 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007

    Abstract: An electroplating processor has a head including a wafer holder, with the head movable to position a wafer in the wafer holder into a vessel holding a first electrolyte and having one or more anodes. A thief electrode assembly may be positioned adjacent to a lower end of the vessel, or below the anode. A thief current channel extends from the thief electrode assembly to a virtual thief position adjacent to the wafer holder. A thief electrode in the thief electrode assembly is positioned within a second electrolyte which is separated from the first electrolyte by a membrane. Alternatively, two membranes may be used with an isolation solution between them. The processor avoids plating metal onto the thief electrode, even when processing redistribution layer and wafer level packaging wafers having high amp-minute electroplating characteristics.

    ELECTROPLATING APPARATUS WITH ELECTROLYTE AGITATION
    9.
    发明申请
    ELECTROPLATING APPARATUS WITH ELECTROLYTE AGITATION 审中-公开
    电解激光电镀设备

    公开(公告)号：US20170022624A1

    公开(公告)日：2017-01-26

    申请号：US14806255

    申请日：2015-07-22

    Applicant: APPLIED Materials, Inc.

    Inventor： Gregory J. Wilson ,  Paul R. McHugh

    IPC: C25D17/00 ,  C25D21/10

    CPC classification number: C25D17/001 ,  C25D5/08 ,  C25D21/10

    Abstract: Electroplating apparatus agitates electrolyte to provide high velocity fluid flows at the surface of a wafer. The apparatus includes a paddle which provides uniform high mass transfer over the entire wafer, even with a relatively large gap between the paddle and the wafer. Consequently, the processor may have an electric field shield positioned between the paddle and the wafer for effective shielding at the edges of the wafer. The influence of the paddle on the electric field across the wafer is reduced as the paddle is spaced relatively farther from the wafer.

    Abstract translation: 电镀装置搅拌电解质以在晶片的表面提供高速流体流。 该设备包括桨叶，其甚至在桨叶和晶片之间具有相对较大的间隙，在整个晶片上提供均匀的高质量传递。 因此，处理器可以具有位于叶片和晶片之间的电场屏蔽，用于在晶片的边缘处有效屏蔽。 当桨叶离晶片相对较远时，桨叶对晶片上的电场的影响减小。

    ELECTROPLATING WAFERS HAVING A NOTCH
    10.
    发明申请
    ELECTROPLATING WAFERS HAVING A NOTCH 有权
    具有凹槽的电镀波纹管

    公开(公告)号：US20160305038A1

    公开(公告)日：2016-10-20

    申请号：US14686537

    申请日：2015-04-14

    Applicant: APPLIED Materials, Inc.

    Inventor： Paul R. McHugh ,  Gregory J. Wilson

    IPC: C25D17/00

    CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/005 ,  C25D17/008

    Abstract: An electroplating apparatus has a vessel for holding electrolyte. A head has a rotor including a contact ring for holding a wafer having a notch. The contact ring includes a perimeter voltage ring having perimeter contact fingers for contacting the wafer around the perimeter of the wafer, except at the notch. The contact ring also has a notch contact segment having one or more notch contact fingers for contacting the wafer at the notch. The perimeter voltage ring is insulated from the notch contact segment. A negative voltage source is connected to the perimeter voltage ring, and a positive voltage source connected to the notch contact segment. The positive voltage applied at the notch reduces the current crowding effect at the notch. The wafer is plated with a film having more uniform thickness.

    Abstract translation: 电镀装置具有容纳电解液的容器。 头部具有包括用于保持具有凹口的晶片的接触环的转子。 接触环包括具有周边接触指状物的周边电压环，除了在凹口之外，接触圆周围晶片的周边接触晶片。 接触环还具有切口接触段，该切口接触段具有用于在切口处接触晶片的一个或多个切口接触指。 周边电压环与凹口接触段绝缘。 负电压源连接到周边电压环，正电压源连接到切口触点段。 在凹口处施加的正电压降低了凹口处的电流拥挤效应。 晶圆上镀上厚度更均匀的薄膜。

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