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    Methods to fabricate MOSFET devices using selective deposition process
    1.
    发明授权
    Methods to fabricate MOSFET devices using selective deposition process 有权
    使用选择性沉积工艺制造MOSFET器件的方法

    公开(公告)号：US07132338B2

    公开(公告)日：2006-11-07

    申请号：US10845984

    申请日：2004-05-14

    申请人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    发明人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823814 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7848

    摘要： In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.

    摘要翻译： 在一个实施例中，提供了一种在衬底表面上制造硅基器件的方法，其包括通过将衬底表面暴露于包含Cl 2 SiH 2的第一工艺气体来沉积第一含硅层， 锗源，第一蚀刻剂和载气，并且通过将第一含硅层暴露于包含SiH 4 N 2的第二工艺气体而沉积第二含硅层， 和第二蚀刻剂。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以约15at％或更多的第一锗浓度在衬底表面上沉积第一含硅层。 该方法进一步提供了在第一含硅层上沉积第二含硅层，其中第二锗浓度为约15原子％或更低，将基底表面暴露于空气中以形成天然氧化物层，将天然氧化物层去除 暴露第二含硅层，并在第二含硅层上沉积第三含硅层。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以第一晶格应变在衬底表面上外延沉积第一含硅层，并且在第一含硅层上外延沉积 第二含硅层具有大于第一晶格应变的第二晶格应变。

    Methods to fabricate MOSFET devices using a selective deposition process
    2.
    发明授权
    Methods to fabricate MOSFET devices using a selective deposition process 有权
    使用选择性沉积工艺制造MOSFET器件的方法

    公开(公告)号：US07737007B2

    公开(公告)日：2010-06-15

    申请号：US12201681

    申请日：2008-08-29

    申请人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    发明人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

    摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

    摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

    METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS
    4.
    发明申请
    METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS 有权
    使用选择性沉积工艺制作MOSFET器件的方法

    公开(公告)号：US20090011578A1

    公开(公告)日：2009-01-08

    申请号：US12201681

    申请日：2008-08-29

    申请人： ARKADII V. SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    发明人： ARKADII V. SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

    IPC分类号： H01L21/203

    CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

    摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

    摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。