公开(公告)号：US10648078B2

公开(公告)日：2020-05-12

申请号：US15322653

申请日：2015-11-03

Applicant: ASM International N.V.

Inventor： Ernst Hendrik August Granneman ,  Leilei Hu

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  H01L21/677 ,  C23C16/54 ,  H01J37/32

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：US10738382B2

公开(公告)日：2020-08-11

申请号：US14777945

申请日：2014-03-18

Applicant: ASM INTERNATIONAL N.V.

Inventor： Ernst Hendrik August Granneman ,  Pieter Tak

IPC: C23C16/455 ,  H01L21/677 ,  B65G51/03 ,  C23C16/54 ,  C23C16/44

Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 142) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

公开(公告)号：US20170167020A1

公开(公告)日：2017-06-15

申请号：US15322653

申请日：2015-11-03

Applicant: ASM International N.V.

Inventor： Ernst Hendrik August Granneman ,  Leilei HU

IPC: C23C16/455 ,  C23C16/54 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45548 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01L21/6776 ,  H01L21/67784

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：US11339474B2

公开(公告)日：2022-05-24

申请号：US16833937

申请日：2020-03-30

Applicant: ASM International N.V.

Inventor： Ernst Hendrik August Granneman ,  Leilei Hu

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  H01L21/677 ,  C23C16/54 ,  H01J37/32

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

公开(公告)号：US20170076935A1

公开(公告)日：2017-03-16

申请号：US15363348

申请日：2016-11-29

Applicant: ASM INTERNATIONAL N.V.

Inventor： Ernst Hendrik August Granneman

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/4412 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4582 ,  H01L21/02178 ,  H01L21/67784

Abstract: An apparatus (100) comprising:—a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T);—a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; and—a plurality of gas exhaust channels (110), provided in both said intend tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.

Abstract translation: 一种设备（100），包括： - 包括下部隧道壁（120），上部隧道壁（130）和两个横向隧道壁（108）的工艺隧道（102），其中所述隧道壁一起结合了过程隧道空间 （104），其沿输送方向（T）延伸; - 设置在所述下隧道壁和所述上隧道壁中的多个气体注入通道（122,132），其中所述下隧道壁中的气体注入通道被配置为 提供较低的气体轴承（124），而上部隧道壁中的气体注入通道构造成提供上部气体轴承（134），所述气体轴承构造成在其间漂浮地支撑并容纳所述基底; 和设置在两个所述预期隧道壁（108）中的多个排气通道（110），其中每个横向隧道壁中的排气通道在运输方向上间隔开。

公开(公告)号：US20160281233A1

公开(公告)日：2016-09-29

申请号：US14777945

申请日：2014-03-18

Applicant: ASM INTERNATIONAL N.V.

Inventor： Ernst Hendrik August Granneman ,  Pieter Tak

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/677

Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 42) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

Abstract translation: 一种衬底处理设备（100），包括一个包括下部隧道壁（122），上部隧道壁（142）和两个横向隧道壁（128）的工艺隧道（102），所述隧道壁被构造成将工艺隧道 空间（104），其沿纵向输送方向（7）延伸并且适于容纳平行于上部和下部隧道壁（122,142）定向的至少一个基本平坦的基板（180），所述过程隧道被分割成 包括下部隧道壁的下部隧道主体（120）和包括上部隧道壁的上部隧道主体（140），所述隧道主体（120,140）沿着至少一个纵向延伸的连接（160）可分离地彼此连接， 使得它们在其中结合了过程管道空间（104）的隧道壁（122,128,42）和允许侧向维护进入过程管道内部的打开构造的关闭构造之间可相互移动。